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@article{202072,
author = {Pinkas, Jiří and Chakraborty, D. and Yang, Y. and Murugavel, R. and Noltemeyer, M. and Roesky, Herbert W.},
article_location = {Spojené státy americké},
article_number = {4},
keywords = {building blocks; phosphates; aluminum; gallium; dealkylsilylation},
language = {eng},
issn = {0276-7333},
journal = {Organometallics},
title = {Reactions of Trialkyl Phosphates with Trialkyls of Aluminum and Gallium: New Route to Alumino- and Gallophosphate Compounds via Dealkylsilylation},
volume = {18},
year = {1999}
}
TY - JOUR
ID - 202072
AU - Pinkas, Jiří - Chakraborty, D. - Yang, Y. - Murugavel, R. - Noltemeyer, M. - Roesky, Herbert W.
PY - 1999
TI - Reactions of Trialkyl Phosphates with Trialkyls of Aluminum and Gallium: New Route to Alumino- and Gallophosphate Compounds via Dealkylsilylation
JF - Organometallics
VL - 18
IS - 4
SP - 523
EP - 523
PB - American Chemical Society, Washington DC
SN - 02767333
KW - building blocks
KW - phosphates
KW - aluminum
KW - gallium
KW - dealkylsilylation
N2 - Trialkyl phosphates OP(OR)3 (R = Me, Et, Ph, SiMe3) react with AlMe3, AlEt3, and GaMe3 in hydrocarbon solvents to form the adducts Me3Al.OP(OR)3 (R = Me (1), Et (2), Ph (3), SiMe3 (4)), Et3Al.OP(OR)3 (R = SiMe3 (5)), and Me3Ga.OP(OR)3 (R = Me (6), SiMe3 (7)). These products were characterized by 1H, 13C, 29Si, and 31P NMR, infrared (IR), and mass (MS) spectroscopies, and elemental analysis. The trimethylsilyl ester adducts 4, 5, and 7 further undergo a thermally induced dealkylsilylation with the formation of cyclic alumino- and gallophosphate dimers, [R'2M(m2-O)2P(OSiMe3)2]2 (R'2M = Me2Al (8), Et2Al (9), and Me2Ga (10)). The molecular structures of 8 and 9 were confirmed by X-ray crystallography.
ER -
PINKAS, Jiří, D. CHAKRABORTY, Y. YANG, R. MURUGAVEL, M. NOLTEMEYER a Herbert W. ROESKY. Reactions of Trialkyl Phosphates with Trialkyls of Aluminum and Gallium: New Route to Alumino- and Gallophosphate Compounds via Dealkylsilylation. \textit{Organometallics}. Spojené státy americké: American Chemical Society, Washington DC, 1999, roč.~18, č.~4, s.~523-528. ISSN~0276-7333.
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