Optical characterisation of a thick MOVPE InSb film on GaAs

LORENC, Michal, Jan ŠIK, Alois NEBOJSA, Karel NAVRÁTIL, Josef HUMLÍČEK, V. VORLIČEK and E. HULICIUS. Optical characterisation of a thick MOVPE InSb film on GaAs. In Workshop proceedings EW MOVPE VIII. Prague: Institute of Physics ASCR, CR, 1999, p. 369-372. ISBN 80-238-3551-3.

Basic information

Original name

Optical characterisation of a thick MOVPE InSb film on GaAs

Authors

LORENC, Michal (203 Czech Republic), Jan ŠIK (203 Czech Republic), Alois NEBOJSA (203 Czech Republic), Karel NAVRÁTIL (203 Czech Republic), Josef HUMLÍČEK (203 Czech Republic), V. VORLIČEK and E. HULICIUS

Edition

Prague, Workshop proceedings EW MOVPE VIII, p. 369-372, 1999

Publisher

Institute of Physics ASCR, CR

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Other information

Language

English

Type of outcome

Stať ve sborníku

Field of Study

10302 Condensed matter physics

Country of publisher

Czech Republic

Confidentiality degree

není předmětem státního či obchodního tajemství

RIV identification code

RIV/00216224:14310/99:00000929

Organization unit

Faculty of Science

ISBN

80-238-3551-3

Keywords in English

MOVPE; InSb; ellipsometry; reflectance; Raman; annealing

Tags

annealing, ellipsometry, InSb, MOVPE, Raman, reflectance

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Abstract

V originále

Optical characterisation of a thick MOVPE InSb film on GaAs

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Links

GA202/99/1613, research and development project	Name: Kvantové tečky v polovodičích III-V Investor: Czech Science Foundation, Quantum dots in III - V semiconductors
MSM 143100002, plan (intention)	Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures