Strain relaxation in periodic arrays of Si/SiGe quantum wires
determined by coplanar high resolution x-ray diffraction and
grazing incidence diffraction

J 1999

Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction

ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK et. al.

Základní údaje

Originální název

Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction

Autoři

ZHUANG, Y., Václav HOLÝ (203 Česká republika), J. STANGL, A.A. DARHUBER, Petr MIKULÍK (203 Česká republika, garant), S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT a U. PIETSCH

Vydání

J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 1999, 0022-3727

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.188

Kód RIV

RIV/00216224:14310/99:00001016

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

quantum wires; SiGe; x-ray diffraction; GID

Štítky

GID, quantum wires, SiGe, X-ray diffraction

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 12. 2. 2007 18:57, doc. RNDr. Petr Mikulík, Ph.D.

Anotace

ORIG CZ

V originále

Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.

Česky

Návaznosti

MSM 143100002, záměr

Název: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Citovat

ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK, S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT a U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 1999, roč. 32, č. 9999, s. A224, 6 s. ISSN 0022-3727.

@article{205589,
   author = {Zhuang, Y. and Holý, Václav and Stangl, J. and Darhuber, A.A. and Mikulík, Petr and Zerlauth, S. and Schäffler, F. and Bauer, G. and Darowski, N. and Lübbert, D. and Pietsch, U.},
   article_location = {Velká Britanie},
   article_number = {9999},
   keywords = {quantum wires; SiGe; x-ray diffraction; GID},
   language = {eng},
   issn = {0022-3727},
   journal = {J. Phys. D: Appl. Phys.},
   title = {Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction},
   url = {http://www.sci.muni.cz/~mikulik/Publications.html#ZhuangMikulikXTOP98},
   volume = {32},
   year = {1999}
}

TY  - JOUR
ID  - 205589
AU  - Zhuang, Y. - Holý, Václav - Stangl, J. - Darhuber, A.A. - Mikulík, Petr - Zerlauth, S. - Schäffler, F. - Bauer, G. - Darowski, N. - Lübbert, D. - Pietsch, U.
PY  - 1999
TI  - Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction
JF  - J. Phys. D: Appl. Phys.
VL  - 32
IS  - 9999
SP  - A224
EP  - A224
PB  - IOP Publishing Ltd
SN  - 00223727
KW  - quantum wires
KW  - SiGe
KW  - x-ray diffraction
KW  - GID
UR  - http://www.sci.muni.cz/~mikulik/Publications.html#ZhuangMikulikXTOP98
N2  - Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
ER  -

ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK, S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT a U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 1999, roč.~32, č.~9999, s.~A224, 6 s. ISSN~0022-3727.

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