ZHUANG, Y., Václav HOLÝ, J. STANGL, A.A. DARHUBER, Petr MIKULÍK, S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT and U. PIETSCH. Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, vol. 32, No 9999, p. A224, 6 pp. ISSN 0022-3727. 1999.
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Basic information
Original name Strain relaxation in periodic arrays of Si/SiGe quantum wires determined by coplanar high resolution x-ray diffraction and grazing incidence diffraction
Authors ZHUANG, Y., Václav HOLÝ (203 Czech Republic), J. STANGL, A.A. DARHUBER, Petr MIKULÍK (203 Czech Republic, guarantor), S. ZERLAUTH, F. SCHÄFFLER, G. BAUER, N. DAROWSKI, D. LÜBBERT and U. PIETSCH.
Edition J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 1999, 0022-3727.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher United Kingdom of Great Britain and Northern Ireland
Confidentiality degree is not subject to a state or trade secret
WWW URL
Impact factor Impact factor: 1.188
RIV identification code RIV/00216224:14310/99:00001016
Organization unit Faculty of Science
Keywords in English quantum wires; SiGe; x-ray diffraction; GID
Tags GID, quantum wires, SiGe, X-ray diffraction
Tags International impact, Reviewed
Changed by Changed by: doc. RNDr. Petr Mikulík, Ph.D., učo 855. Changed: 12/2/2007 18:57.
Abstract
Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
Abstract (in Czech)
Elastic relaxation in dry-etched periodic wires fabricated from molecular beam epitaxy grown Si/SiGe multilayers was studied by coplanar and grazing incidence (GID) high-resolution x-ray diffraction. The inhomogeneous strain distribution in the wires was calculated by the finite element method, which provided the input data for simulations of the scattered intensities using kinematical diffraction theory used for comparison with measured reciprocal space maps. A fabrication-induced layer covering the wire surfaces, modifies the strain distribution. Using GID, the geometrical shape of the wires and their in-plane strain can be determined independently of each other.
Links
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
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