AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT
CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS

D 2021

AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Martin DUBAU, Petr VAŠINA et. al.

Základní údaje

Originální název

AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS

Autoři

DREVET, Richard Gaetan Paul (250 Francie, domácí), Pavel SOUČEK (203 Česká republika, domácí), Pavel MAREŠ, Martin DUBAU a Petr VAŠINA (203 Česká republika, domácí)

Vydání

Ostrava, Proceedings 13th International Conference on Nanomaterials - Research & Application, od s. 69-73, 5 s. 2021

Nakladatel

TANGER Ltd.

Další údaje

Jazyk

angličtina

Typ výsledku

Stať ve sborníku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Forma vydání

tištěná verze "print"

Odkazy

URL

Kód RIV

RIV/00216224:14310/21:00128614

Organizační jednotka

Přírodovědecká fakulta

ISBN

978-80-88365-00-6

ISSN

DOI

http://dx.doi.org/10.37904/nanocon.2021.4324

Klíčová slova anglicky

Reactive magnetron sputtering; aluminum oxide; tantalum oxide; multilayer thin films; dielectric breakdown

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 2. 2023 11:07, Mgr. Marie Šípková, DiS.

Anotace

V originále

This research aims at synthesizing multilayer oxide thin films made of Al2O3 and Ta2O5 for dielectric applications. Multilayer thin films made of two, four, or eight oxide layers are synthesized by physical vapor deposition, specifically the mid-frequency pulsed direct current magnetron sputtering. The thin films are made of stoichiometric Al2O3 and Ta2O5 layers having a specific morphology observed from cross-section images obtained by scanning electron microscopy (SEM). The Al2O3 layers have a columnar structure, whereas the Ta2O5 layers are uniformly dense. X-ray diffraction (XRD) characterizations show that these oxide layers have very limited crystallinity due to the experimental conditions used during the magnetron sputtering process, particularly the low temperature of the substrate.The dielectric behavior of the multilayer oxide thin films is assessed by measuring their dielectric breakdown potential. The two-layer and four-layer systems have intermediate values compared to the dielectric breakdown potentials measured for a monolayer of Al2O3 and a monolayer of Ta2O5 produced under the same experimental conditions. In the case of the eight-layer system, the dielectric breakdown potential value is the highest one, even higher than that measured for a monolayer of Ta2O5.

Citovat

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Martin DUBAU a Petr VAŠINA. AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS. In Proceedings 13th International Conference on Nanomaterials - Research & Application. Ostrava: TANGER Ltd., 2021, s. 69-73. ISBN 978-80-88365-00-6. Dostupné z: https://dx.doi.org/10.37904/nanocon.2021.4324.

@inproceedings{2254779,
   author = {Drevet, Richard Gaetan Paul and Souček, Pavel and Mareš, Pavel and Dubau, Martin and Vašina, Petr},
   address = {Ostrava},
   booktitle = {Proceedings 13th International Conference on Nanomaterials - Research & Application},
   doi = {http://dx.doi.org/10.37904/nanocon.2021.4324},
   keywords = {Reactive magnetron sputtering; aluminum oxide; tantalum oxide; multilayer thin films; dielectric breakdown},
   howpublished = {tištěná verze "print"},
   language = {eng},
   location = {Ostrava},
   isbn = {978-80-88365-00-6},
   pages = {69-73},
   publisher = {TANGER Ltd.},
   title = {AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS},
   url = {https://doi.org/10.37904/nanocon.2021.4324},
   year = {2021}
}

TY  - JOUR
ID  - 2254779
AU  - Drevet, Richard Gaetan Paul - Souček, Pavel - Mareš, Pavel - Dubau, Martin - Vašina, Petr
PY  - 2021
TI  - AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS
PB  - TANGER Ltd.
CY  - Ostrava
SN  - 9788088365006
KW  - Reactive magnetron sputtering
KW  - aluminum oxide
KW  - tantalum oxide
KW  - multilayer thin films
KW  - dielectric breakdown
UR  - https://doi.org/10.37904/nanocon.2021.4324
N2  - This research aims at synthesizing multilayer oxide thin films made of Al2O3 and Ta2O5 for dielectric applications. Multilayer thin films made of two, four, or eight oxide layers are synthesized by physical vapor deposition, specifically the mid-frequency pulsed direct current magnetron sputtering. The thin films are made of stoichiometric Al2O3 and Ta2O5 layers having a specific morphology observed from cross-section images obtained by scanning electron microscopy (SEM). The Al2O3 layers have a columnar structure, whereas the Ta2O5 layers are uniformly dense. X-ray diffraction (XRD) characterizations show that these oxide layers have very limited crystallinity due to the experimental conditions used during the magnetron sputtering process, particularly the low temperature of the substrate.The dielectric behavior of the multilayer oxide thin films is assessed by measuring their dielectric breakdown potential. The two-layer and four-layer systems have intermediate values compared to the dielectric breakdown potentials measured for a monolayer of Al2O3 and a monolayer of Ta2O5 produced under the same experimental conditions. In the case of the eight-layer system, the dielectric breakdown potential value is the highest one, even higher than that measured for a monolayer of Ta2O5.
ER  -

DREVET, Richard Gaetan Paul, Pavel SOUČEK, Pavel MAREŠ, Martin DUBAU a Petr VAŠINA. AL2O3-TA2O5 MULTILAYER THIN FILMS DEPOSITED BY PULSED DIRECT CURRENT MAGNETRON SPUTTERING FOR DIELECTRIC APPLICATIONS. In \textit{Proceedings 13th International Conference on Nanomaterials - Research \&{} Application}. Ostrava: TANGER Ltd., 2021, s.~69-73. ISBN~978-80-88365-00-6. Dostupné z: https://dx.doi.org/10.37904/nanocon.2021.4324.

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