Další formáty:
BibTeX
LaTeX
RIS
@article{2349297, author = {Sala, Elisa Maddalena and Klenovský, Petr}, article_number = {11}, doi = {http://dx.doi.org/10.1088/1367-2630/ad0856}, keywords = {quantum dot; nanomemory; electronic structure; k.p approximation; antimonides}, language = {eng}, issn = {1367-2630}, journal = {New Journal of Physics}, title = {Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications}, url = {https://iopscience.iop.org/article/10.1088/1367-2630/ad0856}, volume = {25}, year = {2023} }
TY - JOUR ID - 2349297 AU - Sala, Elisa Maddalena - Klenovský, Petr PY - 2023 TI - Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications JF - New Journal of Physics VL - 25 IS - 11 SP - 113012 EP - 113012 PB - IOP Publishing Ltd SN - 13672630 KW - quantum dot KW - nanomemory KW - electronic structure KW - k.p approximation KW - antimonides UR - https://iopscience.iop.org/article/10.1088/1367-2630/ad0856 N2 - We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p. ER -
SALA, Elisa Maddalena a Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. \textit{New Journal of Physics}. IOP Publishing Ltd, 2023, roč.~25, č.~11, s.~113012-113028. ISSN~1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/ad0856.
|