Anomalous luminescence temperature dependence of (In, Ga)(As,
Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping
layer for nanomemory applications

J 2023

Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

SALA, Elisa Maddalena a Petr KLENOVSKÝ

Základní údaje

Originální název

Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications

Autoři

SALA, Elisa Maddalena (380 Itálie) a Petr KLENOVSKÝ (203 Česká republika, garant, domácí)

Vydání

New Journal of Physics, IOP Publishing Ltd, 2023, 1367-2630

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Velká Británie a Severní Irsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Odkaz na text vysledku

Impakt faktor

Impact factor: 3.300 v roce 2022

Kód RIV

RIV/00216224:14310/23:00132512

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1088/1367-2630/ad0856

UT WoS

001104262700001

Klíčová slova anglicky

quantum dot; nanomemory; electronic structure; k.p approximation; antimonides

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 13. 2. 2024 09:31, Mgr. Marie Šípková, DiS.

Anotace

V originále

We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.

Návaznosti

EH22_008/0004572, projekt VaV

Název: Kvantové materiály pro aplikace v udržitelných technologiích

MUNI/A/1628/2023, interní kód MU

Název: Struktura, elektronová struktura a optická odezva pokročilých materiálů 2024

Investor: Masarykova univerzita, Struktura, elektronová struktura a optická odezva pokročilých materiálů 2024

Citovat

SALA, Elisa Maddalena a Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. New Journal of Physics. IOP Publishing Ltd, 2023, roč. 25, č. 11, s. 113012-113028. ISSN 1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/ad0856.

@article{2349297,
   author = {Sala, Elisa Maddalena and Klenovský, Petr},
   article_number = {11},
   doi = {http://dx.doi.org/10.1088/1367-2630/ad0856},
   keywords = {quantum dot; nanomemory; electronic structure; k.p approximation; antimonides},
   language = {eng},
   issn = {1367-2630},
   journal = {New Journal of Physics},
   title = {Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications},
   url = {https://iopscience.iop.org/article/10.1088/1367-2630/ad0856},
   volume = {25},
   year = {2023}
}

TY  - JOUR
ID  - 2349297
AU  - Sala, Elisa Maddalena - Klenovský, Petr
PY  - 2023
TI  - Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications
JF  - New Journal of Physics
VL  - 25
IS  - 11
SP  - 113012
EP  - 113012
PB  - IOP Publishing Ltd
SN  - 13672630
KW  - quantum dot
KW  - nanomemory
KW  - electronic structure
KW  - k.p approximation
KW  - antimonides
UR  - https://iopscience.iop.org/article/10.1088/1367-2630/ad0856
N2  - We study (In, Ga)(As, Sb)/GaAs quantum dots (QDs) embedded in a GaP (100) matrix, which are overgrown by a thin GaSb capping layer with variable thickness. QD samples are studied by temperature-dependent photoluminescence, and we observe that the QD emission shows anomalous temperature dependence, ie increase of energy with temperature increase from 10 K to∼ 70 K, followed by energy decrease for larger temperatures. With the help of fitting of luminescence spectra by Gaussian bands with energies extracted from eight band k.p.
ER  -

SALA, Elisa Maddalena a Petr KLENOVSKÝ. Anomalous luminescence temperature dependence of (In, Ga)(As, Sb)/GaAs/GaP quantum dots overgrown by a thin GaSb capping layer for nanomemory applications. \textit{New Journal of Physics}. IOP Publishing Ltd, 2023, roč.~25, č.~11, s.~113012-113028. ISSN~1367-2630. Dostupné z: https://dx.doi.org/10.1088/1367-2630/ad0856.

Podrobný výpis o publikaci