J 2024

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae

CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI et. al.

Základní údaje

Originální název

Thick Does the Trick: Genesis of Ferroelectricity in 2D GeTe-Rich (GeTe)m(Sb2Te3)n Lamellae

Autoři

CECCHI, Stefano, Jamo MOMAND, Daniele DRAGONI, Abou El Kheir OMAR, Federico FAGIANI, Dominik KRIEGNER, Christian RINALDI, Fabrizio ARCIPRETE, Václav HOLÝ (203 Česká republika, domácí), Bart J. KOOI, Marco BERNASCONI a Raffaella CALARCO

Vydání

Advanced Science, Wiley, 2024, 2198-3844

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Spojené státy

Utajení

není předmětem státního či obchodního tajemství

Odkazy

Impakt faktor

Impact factor: 15.100 v roce 2022

Organizační jednotka

Přírodovědecká fakulta

UT WoS

001108011600001

Klíčová slova anglicky

2D ferroelectrics; van der Waals; molecular beam epitaxy; phase-change materials; density functional theory calculations

Štítky

Příznaky

Mezinárodní význam, Recenzováno
Změněno: 19. 1. 2024 10:36, Mgr. Marie Šípková, DiS.

Anotace

V originále

The possibility to engineer (GeTe)(m)(Sb2Te3)n phase-change materials to co-host ferroelectricity is extremely attractive. The combination of these functionalities holds great technological impact, potentially enabling the design of novel multifunctional devices. Here an experimental and theoretical study of epitaxial (GeTe)(m)(Sb2Te3)n with GeTe-rich composition is presented. These layered films feature a tunable distribution of (GeTe)m(Sb2Te3)(1) blocks of different sizes. Breakthrough evidence of ferroelectric displacement in thick (GeTe)m(Sb2Te3)(1) lamellae is provided. The density functional theory calculations suggest the formation of a tilted (GeTe)m slab sandwiched in GeTe-rich blocks. That is, the net ferroelectric polarization is confined almost in-plane, representing an unprecedented case between 2D and bulk ferroelectric materials. The ferroelectric behavior is confirmed by piezoresponse force microscopy and electroresistive measurements. The resilience of the quasi van der Waals character of the films, regardless of their composition, is also demonstrated. Hence, the material developed hereby gathers in a unique 2D platform the phase-change and ferroelectric switching properties, paving the way for the conception of innovative device architectures.