Electronic properties of Fe impurities in SnS van der Waals
crystals – Revealing high-mobility holes

J 2024

Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes

NAVRÁTIL, J., Ondřej CAHA, J. KOPEČEK, P. ČERMÁK, J. PROKLEŠKA et. al.

Základní údaje

Originální název

Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes

Autoři

NAVRÁTIL, J., Ondřej CAHA (203 Česká republika, domácí), J. KOPEČEK, P. ČERMÁK, J. PROKLEŠKA, Václav HOLÝ (203 Česká republika, domácí), V. SECHOVSKÝ, L. BENEŠ, K. CARVA, J. HONOLKA a Č. DRAŠAR

Vydání

Materials Science and Engineering: B, Elsevier, 2024, 0921-5107

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 3.600 v roce 2022

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1016/j.mseb.2023.117148

UT WoS

001155796300001

Klíčová slova anglicky

p-type SnS; Single crystal; Semiconductor; Doping; Electrical properties

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 28. 2. 2024 11:50, Mgr. Marie Šípková, DiS.

Anotace

V originále

Defect control is critical to achieve long carrier lifetimes in semiconductors. SnS is a promising thermoelectric and photovoltaic material, in which native defects play a detrimental role, particularly in photovoltaics. In this study, we investigated the Fe-doping of SnS and the interaction of Fe impurities with native defects in a series of single crystals of Sn1-xFexS up to concentrations of x = 0.05. Although the doped single crystals appear rather disordered, the hole mobility is very high (∼8500 cm2V-1s−1 at 30 K for Sn0.99Fe0.01S), suggesting that hole-mediated charge transport in this material is largely insensitive to extrinsic impurities. Charge transport analysis suggests that the incorporation of Fe atoms leads to the healing of the intrinsic defect structure and the exclusion of minority electrons from charge transport, allowing the observation of high hole mobility.

Návaznosti

90251, velká výzkumná infrastruktura

Název: CzechNanoLab II

90265, velká výzkumná infrastruktura

Název: MGML II

Citovat

NAVRÁTIL, J., Ondřej CAHA, J. KOPEČEK, P. ČERMÁK, J. PROKLEŠKA, Václav HOLÝ, V. SECHOVSKÝ, L. BENEŠ, K. CARVA, J. HONOLKA a Č. DRAŠAR. Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes. Materials Science and Engineering: B. Elsevier, 2024, roč. 301, March 2024, s. 1-10. ISSN 0921-5107. Dostupné z: https://dx.doi.org/10.1016/j.mseb.2023.117148.

@article{2379477,
   author = {Navrátil, J. and Caha, Ondřej and Kopeček, J. and Čermák, P. and Prokleška, J. and Holý, Václav and Sechovský, V. and Beneš, L. and Carva, K. and Honolka, J. and Drašar, Č.},
   article_number = {March 2024},
   doi = {http://dx.doi.org/10.1016/j.mseb.2023.117148},
   keywords = {p-type SnS; Single crystal; Semiconductor; Doping; Electrical properties},
   language = {eng},
   issn = {0921-5107},
   journal = {Materials Science and Engineering: B},
   title = {Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes},
   url = {https://www.sciencedirect.com/science/article/pii/S0921510723008905},
   volume = {301},
   year = {2024}
}

TY  - JOUR
ID  - 2379477
AU  - Navrátil, J. - Caha, Ondřej - Kopeček, J. - Čermák, P. - Prokleška, J. - Holý, Václav - Sechovský, V. - Beneš, L. - Carva, K. - Honolka, J. - Drašar, Č.
PY  - 2024
TI  - Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes
JF  - Materials Science and Engineering: B
VL  - 301
IS  - March 2024
SP  - 1-10
EP  - 1-10
PB  - Elsevier
SN  - 09215107
KW  - p-type SnS
KW  - Single crystal
KW  - Semiconductor
KW  - Doping
KW  - Electrical properties
UR  - https://www.sciencedirect.com/science/article/pii/S0921510723008905
N2  - Defect control is critical to achieve long carrier lifetimes in semiconductors. SnS is a promising thermoelectric and photovoltaic material, in which native defects play a detrimental role, particularly in photovoltaics. In this study, we investigated the Fe-doping of SnS and the interaction of Fe impurities with native defects in a series of single crystals of Sn1-xFexS up to concentrations of x = 0.05. Although the doped single crystals appear rather disordered, the hole mobility is very high (∼8500 cm2V-1s−1 at 30 K for Sn0.99Fe0.01S), suggesting that hole-mediated charge transport in this material is largely insensitive to extrinsic impurities. Charge transport analysis suggests that the incorporation of Fe atoms leads to the healing of the intrinsic defect structure and the exclusion of minority electrons from charge transport, allowing the observation of high hole mobility.
ER  -

NAVRÁTIL, J., Ondřej CAHA, J. KOPEČEK, P. ČERMÁK, J. PROKLEŠKA, Václav HOLÝ, V. SECHOVSKÝ, L. BENEŠ, K. CARVA, J. HONOLKA a Č. DRAŠAR. Electronic properties of Fe impurities in SnS van der Waals crystals – Revealing high-mobility holes. \textit{Materials Science and Engineering: B}. Elsevier, 2024, roč.~301, March 2024, s.~1-10. ISSN~0921-5107. Dostupné z: https://dx.doi.org/10.1016/j.mseb.2023.117148.

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