A Novel Ferroelectric Rashba Semiconductor

J 2024

A Novel Ferroelectric Rashba Semiconductor

KRIZMAN, Gauthier, Tetiana ZAKUSYLO, Lakshmi SAJEEV, Mahdi HAJLAOUI, Takuya TAKASHIRO et. al.

Základní údaje

Originální název

A Novel Ferroelectric Rashba Semiconductor

Autoři

KRIZMAN, Gauthier (garant), Tetiana ZAKUSYLO, Lakshmi SAJEEV (356 Indie, domácí), Mahdi HAJLAOUI, Takuya TAKASHIRO, Marcin ROSMUS, Natalia OLSZOWSKA, Jacek J. KOŁODZIEJ, Günther BAUER, Ondřej CAHA (203 Česká republika, domácí) a Gunther SPRINGHOLZ

Vydání

Advanced Materials, Wiley-VCH GmbH, 2024, 0935-9648

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Německo

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 29.400 v roce 2022

Organizační jednotka

Přírodovědecká fakulta

DOI

http://dx.doi.org/10.1002/adma.202310278

UT WoS

001129221300001

Klíčová slova anglicky

angle-resolved photoemission spectroscopy; ferroelectricity; IV-VI compounds; phase transition; rashba spin texture; x-ray diffraction

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 2. 4. 2024 09:47, Mgr. Marie Šípková, DiS.

Anotace

V originále

Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1−xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1−xGexTe as a high-potential FERSC system for spintronic applications.

Návaznosti

EH22_008/0004572, projekt VaV

Název: Kvantové materiály pro aplikace v udržitelných technologiích

90251, velká výzkumná infrastruktura

Název: CzechNanoLab II

Citovat

KRIZMAN, Gauthier, Tetiana ZAKUSYLO, Lakshmi SAJEEV, Mahdi HAJLAOUI, Takuya TAKASHIRO, Marcin ROSMUS, Natalia OLSZOWSKA, Jacek J. KOŁODZIEJ, Günther BAUER, Ondřej CAHA a Gunther SPRINGHOLZ. A Novel Ferroelectric Rashba Semiconductor. Advanced Materials. Wiley-VCH GmbH, 2024, roč. 36, č. 13, s. 1-12. ISSN 0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.202310278.

@article{2390638,
   author = {Krizman, Gauthier and Zakusylo, Tetiana and Sajeev, Lakshmi and Hajlaoui, Mahdi and Takashiro, Takuya and Rosmus, Marcin and Olszowska, Natalia and Kołodziej, Jacek J. and Bauer, Günther and Caha, Ondřej and Springholz, Gunther},
   article_number = {13},
   doi = {http://dx.doi.org/10.1002/adma.202310278},
   keywords = {angle-resolved photoemission spectroscopy; ferroelectricity; IV-VI compounds; phase transition; rashba spin texture; x-ray diffraction},
   language = {eng},
   issn = {0935-9648},
   journal = {Advanced Materials},
   title = {A Novel Ferroelectric Rashba Semiconductor},
   url = {https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202310278},
   volume = {36},
   year = {2024}
}

TY  - JOUR
ID  - 2390638
AU  - Krizman, Gauthier - Zakusylo, Tetiana - Sajeev, Lakshmi - Hajlaoui, Mahdi - Takashiro, Takuya - Rosmus, Marcin - Olszowska, Natalia - Kołodziej, Jacek J. - Bauer, Günther - Caha, Ondřej - Springholz, Gunther
PY  - 2024
TI  - A Novel Ferroelectric Rashba Semiconductor
JF  - Advanced Materials
VL  - 36
IS  - 13
SP  - 1-12
EP  - 1-12
PB  - Wiley-VCH GmbH
SN  - 09359648
KW  - angle-resolved photoemission spectroscopy
KW  - ferroelectricity
KW  - IV-VI compounds
KW  - phase transition
KW  - rashba spin texture
KW  - x-ray diffraction
UR  - https://onlinelibrary.wiley.com/doi/full/10.1002/adma.202310278
N2  - Fast, reversible, and low-power manipulation of the spin texture is crucial for next generation spintronic devices like non-volatile bipolar memories, switchable spin current injectors or spin field effect transistors. Ferroelectric Rashba semiconductors (FERSC) are the ideal class of materials for the realization of such devices. Their ferroelectric character enables an electronic control of the Rashba-type spin texture by means of the reversible and switchable polarization. Yet, only very few materials are established to belong to this class of multifunctional materials. Here, Pb1−xGexTe is unraveled as a novel FERSC system down to nanoscale. The ferroelectric phase transition and concomitant lattice distortion are demonstrated by temperature dependent X-ray diffraction, and their effect on electronic properties are measured by angle-resolved photoemission spectroscopy. In few nanometer-thick epitaxial heterostructures, a large Rashba spin-splitting is exhibiting a wide tuning range as a function of temperature and Ge content. This work defines Pb1−xGexTe as a high-potential FERSC system for spintronic applications.
ER  -

KRIZMAN, Gauthier, Tetiana ZAKUSYLO, Lakshmi SAJEEV, Mahdi HAJLAOUI, Takuya TAKASHIRO, Marcin ROSMUS, Natalia OLSZOWSKA, Jacek J. KOŁODZIEJ, Günther BAUER, Ondřej CAHA a Gunther SPRINGHOLZ. A Novel Ferroelectric Rashba Semiconductor. \textit{Advanced Materials}. Wiley-VCH GmbH, 2024, roč.~36, č.~13, s.~1-12. ISSN~0935-9648. Dostupné z: https://dx.doi.org/10.1002/adma.202310278.

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