Influence of oxygen flow on the structure, chemical
composition, and dielectric strength of AlxTayOz thin films
deposited by pulsed-DC reactive magnetron sputtering

J 2025

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE et. al.

Základní údaje

Originální název

Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering

Autoři

DREVET, Richard Gaetan Paul (250 Francie, domácí); Pavel SOUČEK (203 Česká republika, domácí); Pavel MAREŠ; Pavel ONDRAČKA (203 Česká republika, domácí); Matej FEKETE (703 Slovensko, domácí); Martin DUBAU a Petr VAŠINA (203 Česká republika, domácí)

Vydání

Surface and Coatings Technology, Elsevier B.V. 2025, 0257-8972

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 6.100 v roce 2024

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1016/j.surfcoat.2025.131865

UT WoS

001419678800001

EID Scopus

2-s2.0-85216462344

Klíčová slova anglicky

Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown

Štítky

rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 9. 7. 2025 13:44, Mgr. Marie Novosadová Šípková, DiS.

Anotace

V originále

This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.

Návaznosti

FW06010462, projekt VaV

Název: Tenzometrické tenkovrstvé senzory s vysokou citlivostí a životností připravované pomocí magnetronové depozice

Investor: Technologická agentura ČR, Tenzometrické tenkovrstvé senzory s vysokou citlivostí a životností připravované pomocí magnetronové depozice, Podprogram 1 "Technologičtí lídři"

90239, velká výzkumná infrastruktura

Název: CEPLANT II

90251, velká výzkumná infrastruktura

Název: CzechNanoLab II

Citovat

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE; Martin DUBAU a Petr VAŠINA. Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering. Surface and Coatings Technology. Elsevier B.V., 2025, roč. 498, February, s. 1-12. ISSN 0257-8972. Dostupné z: https://doi.org/10.1016/j.surfcoat.2025.131865.

@article{2481301,
   author = {Drevet, Richard Gaetan Paul and Souček, Pavel and Mareš, Pavel and Ondračka, Pavel and Fekete, Matej and Dubau, Martin and Vašina, Petr},
   article_number = {February},
   doi = {https://doi.org/10.1016/j.surfcoat.2025.131865},
   keywords = {Reactive magnetron sputtering; Ternary oxide; Aluminum; Tantalum; Dielectric strength; Dielectric breakdown},
   language = {eng},
   issn = {0257-8972},
   journal = {Surface and Coatings Technology},
   title = {Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering},
   url = {https://doi.org/10.1016/j.surfcoat.2025.131865},
   volume = {498},
   year = {2025}
}

TY  - JOUR
ID  - 2481301
AU  - Drevet, Richard Gaetan Paul - Souček, Pavel - Mareš, Pavel - Ondračka, Pavel - Fekete, Matej - Dubau, Martin - Vašina, Petr
PY  - 2025
TI  - Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering
JF  - Surface and Coatings Technology
VL  - 498
IS  - February
SP  - 1-12
EP  - 1-12
PB  - Elsevier B.V.
SN  - 02578972
KW  - Reactive magnetron sputtering
KW  - Ternary oxide
KW  - Aluminum
KW  - Tantalum
KW  - Dielectric strength
KW  - Dielectric breakdown
UR  - https://doi.org/10.1016/j.surfcoat.2025.131865
N2  - This research aims to study the structure, chemical composition, and dielectric strength of aluminum tantalum oxide (AlxTayOz) thin films deposited on silicon and steel substrates by pulsed direct current reactive magnetron sputtering. Four targets containing different concentrations of aluminum and tantalum are sputtered in an argon-oxygen atmosphere to produce ternary oxide thin films of AlxTayOz. Argon flow is maintained at 60 sccm during the depositions, and several oxygen flows ranging from 5.0 to 39.6 sccm are studied. The change in oxygen flow rate modifies the structure, chemical composition, and dielectric strength of the deposited oxide thin films. The deposition rate of the films is impacted as well. All these properties are also studied for aluminum oxide (AlxOz) and tantalum oxide (TayOz) thin films deposited in the same experimental conditions as a reference. The binary and ternary oxide thin films are dense, uniform, and poorly crystalline. The concentrations of aluminum, tantalum, and oxygen in the thin films depend on both the sputtered target composition and the oxygen flow utilized during deposition. The dielectric strength of the thin films is also oxygen flow dependent. Intermediate oxygen flows are the most efficient to produce AlxTayOz thin films with high dielectric strengths. The highest dielectric strength of 340 +/- 50 V center dot mu m-1 was obtained for 80 at.% Al/20 at.% Ta target composition and 20 sccm O2 flow. The experimental results show that the increased tantalum content in the sputtered target mitigates the effect of poisoning and arcing and increases the deposition rate of AlxTayOz thin films.
ER  -

DREVET, Richard Gaetan Paul; Pavel SOUČEK; Pavel MAREŠ; Pavel ONDRAČKA; Matej FEKETE; Martin DUBAU a Petr VAŠINA. Influence of oxygen flow on the structure, chemical composition, and dielectric strength of AlxTayOz thin films deposited by pulsed-DC reactive magnetron sputtering. \textit{Surface and Coatings Technology}. Elsevier B.V., 2025, roč.~498, February, s.~1-12. ISSN~0257-8972. Dostupné z: https://doi.org/10.1016/j.surfcoat.2025.131865.

Přehled o publikaci