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@inproceedings{357571,
author = {Sťahel, Pavel and Sládek, Petr and Roca i Cabarrocas, Pere and Šťastný, Jiří},
address = {Brno},
booktitle = {Electronic Devices and Systems Y2K - Proceedings},
edition = {první},
keywords = {amorphous silicon; doping; metastability},
language = {eng},
location = {Brno},
isbn = {80-214-1780-3},
pages = {207-212},
publisher = {ing. Zdeněk Novotný, CSc.},
title = {Origin of the metastability of phosphorus or boron doped a-Si:H films},
year = {2000}
}
TY - JOUR
ID - 357571
AU - Sťahel, Pavel - Sládek, Petr - Roca i Cabarrocas, Pere - Šťastný, Jiří
PY - 2000
TI - Origin of the metastability of phosphorus or boron doped a-Si:H films
PB - ing. Zdeněk Novotný, CSc.
CY - Brno
SN - 8021417803
KW - amorphous silicon
KW - doping
KW - metastability
N2 - The effects of light-soaking on either phosphorus- or boron-doped a-Si:H films were studied as functions of the doping level and the temperature. The phosphorus-doped films present a remarkable stability although lightly phosphorus-doped ones show a decrease of their conductivity by five orders of magnitude when light-soaking is performed below 40 C. This effect is attributed to the formation of P-H complexes which are stable at low temperature only. Our results suggest that in both types of doped a-Si:H films the interaction of dopants with hydrogen plays an important role.
ER -
SŤAHEL, Pavel, Petr SLÁDEK, Pere ROCA I CABARROCAS and Jiří ŠŤASTNÝ. Origin of the metastability of phosphorus or boron doped a-Si:H films. In \textit{Electronic Devices and Systems Y2K - Proceedings}. první. Brno: ing. Zdeněk Novotný, CSc., 2000, p.~207-212. ISBN~80-214-1780-3.
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