Další formáty:
BibTeX
LaTeX
RIS
@article{362573, author = {Bochníček, Zdeněk and Vávra, Ivo}, article_number = {10A}, keywords = {Thermal stability; x-ray reflection; interdiffusion; multilayers}, language = {eng}, issn = {0022-3727}, journal = {J. Phys. D: Appl. Phys.}, title = {Thermal stability of partially crystalline Nb/Si multilayers}, volume = {34}, year = {2001} }
TY - JOUR ID - 362573 AU - Bochníček, Zdeněk - Vávra, Ivo PY - 2001 TI - Thermal stability of partially crystalline Nb/Si multilayers JF - J. Phys. D: Appl. Phys. VL - 34 IS - 10A SP - A214 EP - A214 SN - 00223727 KW - Thermal stability KW - x-ray reflection KW - interdiffusion KW - multilayers N2 - The thermal stability of [Nb(6.0 nm)/Si(2.0 nm)*50 (*100) multilayers with partially crystalline Nb sublayer deposited onto an (001) oxidized Si wafer has been studied by in situ x-ray reflectivity, ex situ x-ray diffraction, transmission electron microscopy and measurement of low temperature resistivity in annealing at the temperature range up to 450degC. It has been shown that the annealing leads to interface shift without any significant change of interface roughness, which was explained by the diffusion of Si atoms into Nb sublayer. The densification of the multilayer was attributed to creation of Nb3Si phase at Nb/Si interface; presence of this phase was proved by electron diffraction. Annealing up to 250degC has practically no influence on superconductivity of the system though the structure changes are well detectable. ER -
BOCHNÍČEK, Zdeněk a Ivo VÁVRA. Thermal stability of partially crystalline Nb/Si multilayers. \textit{J. Phys. D: Appl. Phys.}. 2001, roč.~34, 10A, s.~A214, 5 s. ISSN~0022-3727.
|