Detailed Information on Publication Record
2001
GID study of strains in Si due to patterned SiO2
DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER et. al.Basic information
Original name
GID study of strains in Si due to patterned SiO2
Authors
DANIEL, A.;, Václav HOLÝ, Y. ZHUANG, T. ROCH, J. GRENZER, Zdeněk BOCHNÍČEK and G. BAUER
Edition
J. Phys. D: Appl. Phys. Velká Britanie, IOP Publishing Ltd, 2001, 0022-3727
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
Impact factor
Impact factor: 1.260
RIV identification code
RIV/00216224:14310/01:00004220
Organization unit
Faculty of Science
UT WoS
000169093700042
Keywords in English
GID; stress;SiO2
Změněno: 29/5/2001 17:05, doc. RNDr. Zdeněk Bochníček, Dr.
Abstract
V originále
Lateral strain modulation in a Si substrate arising from laterally patterned periodic SiO2 stripes were investigated by x-ray grazing incidence diffraction. In this diffraction geometry a depth dependent in-plane strain analysis was performed. Using finite element calculations the displacement field in the non-patterned Si substrate was calculated, which served as an input for the simulation of the diffracted intensities based on the distorted-wave Born approximation. By varying the lattice mismatch between the SiO2 stripes and the substrate, a good agreement between simulations and experimental diffraction data could be achieved.
Links
| VS96102, research and development project |
|