HOLY, V., T. ROCH, J. STANGL and G. BAUER. Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires. Phys. Rev. B. USA: The American Phys. Society, 2001, vol. 63, No 20, p. 5318-5327. ISSN 0163-1829.
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Basic information
Original name Grazing incidence small-angle x-ray scattering study of self-organized SiGe wires
Authors HOLY, V., T. ROCH, J. STANGL and G. BAUER.
Edition Phys. Rev. B, USA, The American Phys. Society, 2001, 0163-1829.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 3.070
RIV identification code RIV/00216224:14310/01:00005200
Organization unit Faculty of Science
UT WoS 000168937200065
Keywords in English KINETIC GROWTH INSTABILITIES; VICINAL SI(001) SURFACES; STEPPED INTERFACES; GE ISLANDS; MULTILAYERS; DIFFRACTION; SI(113); STRAIN
Tags diffraction, GE ISLANDS, KINETIC GROWTH INSTABILITIES, multilayers, SI(113), STEPPED INTERFACES, STRAIN, VICINAL SI(001) SURFACES
Changed by Changed by: prof. RNDr. Václav Holý, CSc., učo 1656. Changed: 16/1/2002 08:27.
Abstract
The structure of self-organized quantum wires buried at the interfaces of a SiGe/Si multilayer is investigated by grazing incidence small-angle x-ray scattering. A nearly periodic distribution of wires, well described by a short-range ordering model, gives rise to intensity satellite maxima in reciprocal space. The shape of the wire cross section is determined from the heights of these intensity maxima, and the analysis reveals that the conventional step-bunching model is not sufficient to explain the wire shape.
Links
GA202/00/0354, research and development projectName: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek
Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices
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