2001
TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature
KANG, H.H.; G. SPRINGHOLZ; V. HOLY and G. BAUERBasic information
Original name
TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature
Authors
KANG, H.H.; G. SPRINGHOLZ; V. HOLY and G. BAUER
Edition
Materials Science and Engineering, Lausanne, ELSEVIER SCIENCE SA, 2001, 0921-5107
Other information
Language
English
Type of outcome
Article in a journal
Field of Study
10302 Condensed matter physics
Country of publisher
Czech Republic
Confidentiality degree
is not subject to a state or trade secret
Impact factor
Impact factor: 1.022
RIV identification code
RIV/00216224:14310/01:00005201
Organization unit
Faculty of Science
UT WoS
000168260800024
Keywords in English
ISLANDS; SUPERLATTICES; STRAIN; GAAS
Tags
Changed: 16/1/2002 08:32, prof. RNDr. Václav Holý, CSc.
Abstract
V originále
PbSe quantum dot/PbEuTe superlattices were grown on PbTe/BaF2(111) using molecular beam epitaxy. The spacer thickness was varied From 32.4 to 312 nm and the growth temperature was 335 or 380 degreesC. Three different dot stacking sequences form with either vertical, face-centered cubic like or disordered stacking sequence along the [111] growth direction. The different stacking sequence can be controlled by the thickness of the spacer layer and the growth temperature, The dots are fully strained and the shape of the dots is either triangular pyramids or dome like depending on the spacer layer thickness. An analysis of the lateral and vertical correlation of the dots as well as the size and shape of the buried dots with respect to spacer thickness and growth temperature is presented.
Links
| GA202/00/0354, research and development project |
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| VS96102, research and development project |
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