TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature

KANG, H.H., G. SPRINGHOLZ, V. HOLY and G. BAUER. TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature. Materials Science and Engineering. Lausanne: ELSEVIER SCIENCE SA, 2001, vol. 80, 1-3, p. 104-108. ISSN 0921-5107.

Basic information

• Original name: TEM investigation of self-organized PbSe quantum dots as a function of spacer layer thickness and growth temperature
• Authors: KANG, H.H., G. SPRINGHOLZ, V. HOLY and G. BAUER.
• Edition: Materials Science and Engineering, Lausanne, ELSEVIER SCIENCE SA, 2001, 0921-5107.

Other information

• Original language: English
• Type of outcome: Article in a journal
• Field of Study: 10302 Condensed matter physics
• Country of publisher: Czech Republic
• Confidentiality degree: is not subject to a state or trade secret
• Impact factor: Impact factor: 1.022
• RIV identification code: RIV/00216224:14310/01:00005201
• Organization unit: Faculty of Science
• UT WoS: 000168260800024
• Keywords in English: ISLANDS; SUPERLATTICES; STRAIN; GAAS
• Tags: GAAS, ISLANDS, STRAIN, SUPERLATTICES

Abstract

PbSe quantum dot/PbEuTe superlattices were grown on PbTe/BaF2(111) using molecular beam epitaxy. The spacer thickness was varied From 32.4 to 312 nm and the growth temperature was 335 or 380 degreesC. Three different dot stacking sequences form with either vertical, face-centered cubic like or disordered stacking sequence along the [111] growth direction. The different stacking sequence can be controlled by the thickness of the spacer layer and the growth temperature, The dots are fully strained and the shape of the dots is either triangular pyramids or dome like depending on the spacer layer thickness. An analysis of the lateral and vertical correlation of the dots as well as the size and shape of the buried dots with respect to spacer thickness and growth temperature is presented.

Links

• GA202/00/0354, research and development project: Name: Procesy samouspořádání rozhraní při epitaxním růstu polovodičových supermřížek

Investor: Czech Science Foundation, Self-organization processes on the interfaces during epitaxial growth of semiconductor superlattices

• VS96102, research and development project: Name: Laboratoř tenkých vrstev a nanostruktur

Investor: Ministry of Education, Youth and Sports of the CR, Laboratory of thin films and nanostructures