Advanced X-ray diffraction imaging techniques for semiconductor
wafer characterisation

J 2002

Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT et. al.

Základní údaje

Originální název

Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation

Autoři

MIKULÍK, Petr (203 Česká republika, garant), T. BAUMBACH (276 Německo), D. KORYTÁR (703 Slovensko), P. PERNOT (203 Česká republika), D. LÜBBERT (276 Německo), L. HELFEN (276 Německo) a Ch. LANDESBERGER (276 Německo)

Vydání

Materials Structure, Praha, The Czech and Slovak Cryst. Assoc. 2002, 1211-5894

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Kód RIV

RIV/00216224:14310/02:00007825

Organizační jednotka

Přírodovědecká fakulta

Klíčová slova anglicky

wafers; defects; x-ray scattering; diffraction; imaging; silicon; GaAs

Štítky

defects, diffraction, GAAS, imaging, Silicon, wafers, X-ray scattering

Příznaky

Mezinárodní význam

Změněno: 12. 2. 2007 18:38, doc. RNDr. Petr Mikulík, Ph.D.

Anotace

V originále

Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.

Návaznosti

MSM 143100002, záměr

Název: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální vlastnosti nových materiálů a vrstevnatých struktur

Citovat

MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT, L. HELFEN a Ch. LANDESBERGER. Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation. Materials Structure. Praha: The Czech and Slovak Cryst. Assoc., 2002, roč. 9, č. 2, s. 87-88. ISSN 1211-5894.

@article{486967,
   author = {Mikulík, Petr and Baumbach, T. and Korytár, D. and Pernot, P. and Lübbert, D. and Helfen, L. and Landesberger, Ch.},
   article_location = {Praha},
   article_number = {2},
   keywords = {wafers; defects; x-ray scattering; diffraction; imaging; silicon; GaAs},
   language = {eng},
   issn = {1211-5894},
   journal = {Materials Structure},
   title = {Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation},
   url = {http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002},
   volume = {9},
   year = {2002}
}

TY  - JOUR
ID  - 486967
AU  - Mikulík, Petr - Baumbach, T. - Korytár, D. - Pernot, P. - Lübbert, D. - Helfen, L. - Landesberger, Ch.
PY  - 2002
TI  - Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation
JF  - Materials Structure
VL  - 9
IS  - 2
SP  - 87-88
EP  - 87-88
PB  - The Czech and Slovak Cryst. Assoc.
SN  - 12115894
KW  - wafers
KW  - defects
KW  - x-ray scattering
KW  - diffraction
KW  - imaging
KW  - silicon
KW  - GaAs
UR  - http://www.sci.muni.cz/~mikulik/Publications.html#MikulikBaumbachKorytarPLHL-MatStruct-2002
N2  - Wafer quality inspection and defect analysis are crucial for improvements of the wafer fabrication technology as well as for the correlation of device properties with the processes of wafer treating. This work demonstrates trends of high-resolution X-ray diffraction imaging techniques with synchrotron radiation sources and their capability for detailed quality inspection of wafers concerning their structural perfection. We apply these methods to visualise and to characterise the defects and deformations induced by growing, cutting, grinding, etching and gluing in the production of semiconductor wafers (in particular Si and GaAs wafers) and in ultra-thin wafers. We present synchrotron topography and synchrotron area diffractometry methods to analyse qualitatively and quantitatively: dislocations and lineages, micro-defects and micro-cracks, wafer tilts and warpages, tensors of local lattice rotations.
ER  -

MIKULÍK, Petr, T. BAUMBACH, D. KORYTÁR, P. PERNOT, D. LÜBBERT, L. HELFEN a Ch. LANDESBERGER. Advanced X-ray diffraction imaging techniques for semiconductor wafer characterisation. \textit{Materials Structure}. Praha: The Czech and Slovak Cryst. Assoc., 2002, roč.~9, č.~2, s.~87-88. ISSN~1211-5894.

Podrobný výpis o publikaci