ŠIK, Jan, Michal LORENC and Richard ŠTOUDEK. Nitrogen in Czochralski-grown silicon. In SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský. Neuveden: Neuveden, 2002, p. 125-128.
Other formats:   BibTeX LaTeX RIS
Basic information
Original name Nitrogen in Czochralski-grown silicon
Authors ŠIK, Jan (203 Czech Republic), Michal LORENC (203 Czech Republic) and Richard ŠTOUDEK (203 Czech Republic, guarantor).
Edition Neuveden, SILICON 2002, Rožnov pod Radhostěm, TECON Scientific, editor K. Vojtěchovský, p. 125-128, 4 pp. 2002.
Publisher Neuveden
Other information
Original language English
Type of outcome Proceedings paper
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/02:00008873
Organization unit Faculty of Science
Keywords in English silicon; nitrogen
Tags Nitrogen, Silicon
Changed by Changed by: Mgr. Richard Štoudek, Ph.D., učo 11284. Changed: 27/5/2004 17:29.
Abstract
Fourier transform infrared spectroscopy (FTIR) and secondary ion mass spectroscopy (SIMS) are used to study nitrogen-doped Czochralski-grown (CZ) crystal. We observe nitrogen-related vibrational modes typical for CZ silicon and estimate nitrogen content to be 1.6x10^15 cm-3 from its quantitative analysis. This value is in a good agreement with result of 2.4x10^15 cm-3 from calculations assuming constant segregation coefficient 7x10^(-4). On the other hand, SIMS measurements give much higher value of 8.3x10^15 cm-3. Only 4-5% of nitrogen occupy substitutional sites. We also observe an obstruction of dislocation movement during crystal cooling.
Links
MSM 143100002, plan (intention)Name: Fyzikální vlastnosti nových materiálů a vrstevnatých struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical properties of new materials and layered structures
PrintDisplayed: 18/7/2024 13:34