BRZOBOHATÝ, Oto, Vilma BURŠÍKOVÁ and David TRUNEC. Mirror effect in PECVD reactor and its explanation via MC-PIC computer simulation. Czechoslovak Journal of Physics. Prague, Czech Republic: Institute of Physics, Acad. Sci. CR,, 2004, vol. 2004, No 54, p. C527-C532, 6 pp. ISSN 0011-4626.
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Basic information
Original name Mirror effect in PECVD reactor and its explanation via MC-PIC computer simulation
Name in Czech Zrcadlový jev v PECVD reaktoru a jeho vysvětlení pomocí MC-PIC počitačové simulace
Authors BRZOBOHATÝ, Oto (203 Czech Republic, guarantor), Vilma BURŠÍKOVÁ (203 Czech Republic) and David TRUNEC (203 Czech Republic).
Edition Czechoslovak Journal of Physics, Prague, Czech Republic, Institute of Physics, Acad. Sci. CR, 2004, 0011-4626.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10305 Fluids and plasma physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
Impact factor Impact factor: 0.292
RIV identification code RIV/00216224:14310/04:00011467
Organization unit Faculty of Science
UT WoS 000226745500006
Keywords in English plasma-material interactions; Monte Carlo/Particle in Cell; plasma simulation; PECVD
Tags Monte Carlo/Particle in Cell, PECVD, plasma simulation, plasma-material interactions
Changed by Changed by: Mgr. Oto Brzobohatý, Ph.D., učo 15554. Changed: 26/5/2008 12:24.
Abstract
We have studied thin film deposition from methane and thin film sputtering in argon in low pressure rf discharge. We have observed that thickness of a thin film deposited on the upper (grounded) electrode has mirrored substrates placed on the bottom rf powered electrode. The mirror effect has been studied via Monte Carlo - Particle In Cell (MC-PIC) computer simulation. In our explanation the mirror effect is caused by the difference between secondary electron emission coefficient of substrate material and material of the powered electrode. This difference in the secondary electron emission coefficient affects plasma density upon the substrates and this leads to higher or lower deposition rate on the upper electrode. In our simulation we have calculated distribution of impact position for electrons on grounded electrode that have flew from the powered electrode. We have calculated this distribution for ions created in ionization collisions (of secondary electrons with neutrals) too. We have carried out simulation of this distribution for different pressures.
Abstract (in Czech)
Při studiu depozice tenkých vrstev pomocí metody PECVD byl pozorován tzv. zrcadlový jev. Zrcadlovým jevem myslíme to, že deponovaná vrstva na vrchní elektrodě odráží substrat na spodní elektrodě. Hrany obrazu nejsou zcela ostré. Tento jev jsem se snažili vzsvětli pomocí počitačových simulací, kde jako hlavní příčinu označujeme rozdílnost sekundární emise substrátů a dolní elektrody. Jako hlavní výsledek naších simulací uvádíme prostorové rozděleni sekundárních elektronů a iontů dopadajících na protější elektrodu.
Links
GA202/03/0827, research and development projectName: Studium elementárních procesů v nízkoteplotním a technologicky orientovaném plazmatu a vývoj relevantních diagnostických metod
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