KLAPETEK, Petr, Ivan OHLÍDAL a Karel NAVRÁTIL. Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation. Microchimica Acta. Wien: Springer-Verlag, 2004, roč. 147, č. 3, s. 175-180. ISSN 0026-3672. |
Další formáty:
BibTeX
LaTeX
RIS
@article{562896, author = {Klapetek, Petr and Ohlídal, Ivan and Navrátil, Karel}, article_location = {Wien}, article_number = {3}, keywords = {THIN-FILMS; OPTICAL-PROPERTIES; OXIDE FILM; TIO2; BOUNDARIES; INTERFACE; SINGLE; LAYERS}, language = {eng}, issn = {0026-3672}, journal = {Microchimica Acta}, title = {Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation}, volume = {147}, year = {2004} }
TY - JOUR ID - 562896 AU - Klapetek, Petr - Ohlídal, Ivan - Navrátil, Karel PY - 2004 TI - Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation JF - Microchimica Acta VL - 147 IS - 3 SP - 175-180 EP - 175-180 PB - Springer-Verlag SN - 00263672 KW - THIN-FILMS KW - OPTICAL-PROPERTIES KW - OXIDE FILM KW - TIO2 KW - BOUNDARIES KW - INTERFACE KW - SINGLE KW - LAYERS N2 - We have determined the important statistical quantities of the rough boundary between a GaAs single crystal and its oxide film formed by thermal oxidation. Thermal oxidation of the GaAs surfaces was performed at the temperature of 500 degreesC. Using mathematical procedures developed for treating AFM data consisting of a family of the values of the heights of the irregularities of this roughness the values of the important statistical quantities of roughness were determined for 11 samples of the GaAs surfaces created by dissolution of the thermal oxide films originated during thermal oxidation of the smooth GaAs samples (the times of oxidation of these 11 samples were within interval of 20 min-8 hours). From the AFM analysis of the roughness of GaAs surfaces it was found that the roughnening of these surfaces was the most pronounced for shorter oxidation times, i.e. for times smaller than about 2 hours. ER -
KLAPETEK, Petr, Ivan OHLÍDAL a Karel NAVRÁTIL. Atomic Force Microscopy Analysis of Statistical Roughness of GaAs Surfaces Originated by Thermal Oxidation. \textit{Microchimica Acta}. Wien: Springer-Verlag, 2004, roč.~147, č.~3, s.~175-180. ISSN~0026-3672.
|