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@inproceedings{566408,
author = {Klang, Pavel and Holý, Václav and Štoudek, Richard and Šik, Jan},
address = {Rožnov pod Radhoštěm, Česká republika},
booktitle = {Proceedings of The Ninth Scientific and Business Conference SILICON 2004},
edition = {2004},
keywords = {X-ray; Diffuse Scattering; Defect; Silicon; Nitrogen doping},
language = {eng},
location = {Rožnov pod Radhoštěm, Česká republika},
pages = {53-53},
publisher = {TECON Scientific, s.r.o.},
title = {X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers},
year = {2004}
}
TY - JOUR
ID - 566408
AU - Klang, Pavel - Holý, Václav - Štoudek, Richard - Šik, Jan
PY - 2004
TI - X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers
PB - TECON Scientific, s.r.o.
CY - Rožnov pod Radhoštěm, Česká republika
KW - X-ray
KW - Diffuse Scattering
KW - Defect
KW - Silicon
KW - Nitrogen doping
N2 - We have studied nitrogen-doped silicon wafers (001) using triple-axis high-resolution X-ray diffraction (HRXRD). The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space map determines the type of dislocation loops and from cross section we can determine their radius and concentration. These parameters were combined with the results from infrared absorption spectroscopy method.
ER -
KLANG, Pavel, Václav HOLÝ, Richard ŠTOUDEK a Jan ŠIK. X-ray Diffuse Scattering from Defects in Nitrogen-doped Czochralski Grown Silicon Wafers. In \textit{Proceedings of The Ninth Scientific and Business Conference SILICON 2004}. 2004. vyd. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, s.~53.
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