ŠTOUDEK, Richard, Michal LORENC and Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon. In Proceedings of The Ninth Scientific and Business Conference SILICON 2004. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, p. 146-150. |
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@inproceedings{566428, author = {Štoudek, Richard and Lorenc, Michal and Humlíček, Josef}, address = {Rožnov pod Radhoštěm, Česká republika}, booktitle = {Proceedings of The Ninth Scientific and Business Conference SILICON 2004}, keywords = {Infrared; Silicon; Oxygen; Precipitates; Nitrogen doping}, language = {eng}, location = {Rožnov pod Radhoštěm, Česká republika}, pages = {146-150}, publisher = {TECON Scientific, s.r.o.}, title = {Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon}, year = {2004} }
TY - JOUR ID - 566428 AU - Štoudek, Richard - Lorenc, Michal - Humlíček, Josef PY - 2004 TI - Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon PB - TECON Scientific, s.r.o. CY - Rožnov pod Radhoštěm, Česká republika KW - Infrared KW - Silicon KW - Oxygen KW - Precipitates KW - Nitrogen doping N2 - We have analysed infrared transmittance spectra of Czochralski silicon. Using measurements at liquid nitrogen temperature we have identified the contribution of oxygen precipitates of different shapes. An effective-medium model of average dielectric constant has been used to determine the shape, volume fraction and stoichiometry of the precipitates. Standard and nitrogen-doped samples have been measured; we have observed a favourable influence of nitrogen on oxygen precipitation. ER -
ŠTOUDEK, Richard, Michal LORENC and Josef HUMLÍČEK. Infrared Absorption Spectroscopy of Oxygen Precipitates in Nitrogen-doped Czochralski Silicon. In \textit{Proceedings of The Ninth Scientific and Business Conference SILICON 2004}. Rožnov pod Radhoštěm, Česká republika: TECON Scientific, s.r.o., 2004, p.~146-150.
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