KLANG, Pavel, Václav HOLÝ, Josef KUBĚNA, Richard ŠTOUDEK a Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. J. Phys. D: Appl. Phys. Velká Britanie: IOP Publishing Ltd, 2005, roč. 2005, č. 38, s. A105-A110, 6 s. ISSN 0022-3727. |
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@article{571023, author = {Klang, Pavel and Holý, Václav and Kuběna, Josef and Štoudek, Richard and Šik, Jan}, article_location = {Velká Britanie}, article_number = {38}, keywords = {X-ray; diffuse scattering; defects; nitrogen; silicon}, language = {eng}, issn = {0022-3727}, journal = {J. Phys. D: Appl. Phys.}, title = {X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers}, volume = {2005}, year = {2005} }
TY - JOUR ID - 571023 AU - Klang, Pavel - Holý, Václav - Kuběna, Josef - Štoudek, Richard - Šik, Jan PY - 2005 TI - X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers JF - J. Phys. D: Appl. Phys. VL - 2005 IS - 38 SP - A105-A110 EP - A105-A110 PB - IOP Publishing Ltd SN - 00223727 KW - X-ray KW - diffuse scattering KW - defects KW - nitrogen KW - silicon N2 - We have studied nitrogen-doped silicon wafers from origin, middle and end of the ingot, annealed at low and high temperatures, using triple-axis high-resolution X-ray diffraction. The reciprocal space intensity distributions from clusters, stacking faults and dislocation loops were modelled using the Krivoglaz theory and a continuum model of the defect deformation field. Good agreement of the theory with the experimental data was achieved for the model of dislocation loops. The symmetry of measured reciprocal space maps determines the type of dislocation loops and from cross sections we can obtain the radius and concentration of the loops. These parameters were combined with the results from selective etching and infrared absorption spectroscopy method. ER -
KLANG, Pavel, Václav HOLÝ, Josef KUBĚNA, Richard ŠTOUDEK a Jan ŠIK. X-ray diffuse scattering from defects in nitrogen-doped Czochralski grown silicon wafers. \textit{J. Phys. D: Appl. Phys.}. Velká Britanie: IOP Publishing Ltd, 2005, roč.~2005, č.~38, s.~A105-A110, 6 s. ISSN~0022-3727.
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