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@inproceedings{575781,
author = {Buršíková, Vilma and Sládek, Petr and Sťahel, Pavel and Buršík, Jiří},
address = {Lisbon},
booktitle = {Book of abstract - ICANS 21},
keywords = {amorphous semiconductor; mechanical properties; thin film},
language = {eng},
location = {Lisbon},
isbn = {972-8893-04-3},
pages = {162-162},
publisher = {Universidade Nova de Lisboa},
title = {Complex study of the mechanical properties of a-Si:H and a-SiC:H thin films},
year = {2005}
}
TY - JOUR
ID - 575781
AU - Buršíková, Vilma - Sládek, Petr - Sťahel, Pavel - Buršík, Jiří
PY - 2005
TI - Complex study of the mechanical properties of a-Si:H and a-SiC:H thin films
PB - Universidade Nova de Lisboa
CY - Lisbon
SN - 9728893043
KW - amorphous semiconductor
KW - mechanical properties
KW - thin film
N2 - The aim of this study is to provide the complex study of the mechanical properties of a-SiH and a-SiC:H thin films prepared under different plasma conditions.
ER -
BURŠÍKOVÁ, Vilma, Petr SLÁDEK, Pavel SŤAHEL a Jiří BURŠÍK. Complex study of the mechanical properties of a-Si:H and a-SiC:H thin films. In \textit{Book of abstract - ICANS 21}. Lisbon: Universidade Nova de Lisboa, 2005, s.~162. ISBN~972-8893-04-3.
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