2005
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
KRÁĽ, Martin; Andrej BUČEK; Miroslav ZÁHORAN; Mirko ČERNÁK; Jaroslav RUSNÁK et. al.Basic information
Original name
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
Name in Czech
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
Authors
KRÁĽ, Martin; Andrej BUČEK; Miroslav ZÁHORAN; Mirko ČERNÁK; Jaroslav RUSNÁK and Emil PINČÍK
Edition
1. vyd. Itálie, Proc. SREN 2005, p. 47-48, 2 pp. 2005
Publisher
U
Other information
Language
English
Type of outcome
Proceedings paper
Field of Study
10305 Fluids and plasma physics
Country of publisher
Italy
Confidentiality degree
is not subject to a state or trade secret
Organization unit
Faculty of Science
ISBN
80-223-2045-5
Changed: 5/1/2006 15:17, prof. RNDr. Mirko Černák, CSc.
In the original language
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge
In Czech
On Formation of Very Thin SiO2/a-Si:H/c-Si Structures by Plasma Immersion Ion Implantation and Dielectric Barrier Discharge