GANCIU, Mihai, Petr VAŠINA, Marcel MEŠKO, Jean-Christophe IMBERT, Ludovic DE POUCQUES, Caroline BOISSE-LAPORTE, Jean BRETAGNE, Michel TOUZEAU, Olivier VOLDOIRE, Marie-Christine HUGON a Bernard AGIUS. Ionized physical vapor deposition by high power fast pulsed magnetron discharge. In Actes du workshop Nouveaux oxydes a forte permittivite dans l integration des semi-conducteurs. Paris: Societe Francaise du Vide, 2005, s. 83-89. |
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@inproceedings{611104, author = {Ganciu, Mihai and Vašina, Petr and Meško, Marcel and Imbert, JeanandChristophe and de Poucques, Ludovic and BoisseandLaporte, Caroline and Bretagne, Jean and Touzeau, Michel and Voldoire, Olivier and Hugon, MarieandChristine and Agius, Bernard}, address = {Paris}, booktitle = {Actes du workshop Nouveaux oxydes a forte permittivite dans l integration des semi-conducteurs}, keywords = {pulsed magnetron discharge; IPVD}, language = {eng}, location = {Paris}, pages = {83-89}, publisher = {Societe Francaise du Vide}, title = {Ionized physical vapor deposition by high power fast pulsed magnetron discharge}, year = {2005} }
TY - JOUR ID - 611104 AU - Ganciu, Mihai - Vašina, Petr - Meško, Marcel - Imbert, Jean-Christophe - de Poucques, Ludovic - Boisse-Laporte, Caroline - Bretagne, Jean - Touzeau, Michel - Voldoire, Olivier - Hugon, Marie-Christine - Agius, Bernard PY - 2005 TI - Ionized physical vapor deposition by high power fast pulsed magnetron discharge PB - Societe Francaise du Vide CY - Paris KW - pulsed magnetron discharge KW - IPVD N2 - Study of newly developed preionized (by low DC current) high power pulsed magnetron discharge. ER -
GANCIU, Mihai, Petr VAŠINA, Marcel MEŠKO, Jean-Christophe IMBERT, Ludovic DE POUCQUES, Caroline BOISSE-LAPORTE, Jean BRETAGNE, Michel TOUZEAU, Olivier VOLDOIRE, Marie-Christine HUGON a Bernard AGIUS. Ionized physical vapor deposition by high power fast pulsed magnetron discharge. In \textit{Actes du workshop Nouveaux oxydes a forte permittivite dans l integration des semi-conducteurs}. Paris: Societe Francaise du Vide, 2005, s.~83-89.
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