FALUB, Claudiu, Mojmír MEDUŇA, Elisabeth MÜLLER, Soichiro TSUJINO, Alex BORAK, Hans SIGG, Detlev GRÜTZMACHER, Thomas FROMHERZ a Günther BAUER. Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy. Journal of crystal growth. Amsterdam: Elsevier Science, 2005, roč. 278, 1-4, s. 495-499. ISSN 0022-0248. |
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@article{633969, author = {Falub, Claudiu and Meduňa, Mojmír and Müller, Elisabeth and Tsujino, Soichiro and Borak, Alex and Sigg, Hans and Grützmacher, Detlev and Fromherz, Thomas and Bauer, Günther}, article_location = {Amsterdam}, article_number = {1-4}, keywords = {High-resolution X-ray diffraction; Multiple quantumwell structures; Molecular beamepitaxy; Si/SiGe}, language = {eng}, issn = {0022-0248}, journal = {Journal of crystal growth}, title = {Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy}, volume = {278}, year = {2005} }
TY - JOUR ID - 633969 AU - Falub, Claudiu - Meduňa, Mojmír - Müller, Elisabeth - Tsujino, Soichiro - Borak, Alex - Sigg, Hans - Grützmacher, Detlev - Fromherz, Thomas - Bauer, Günther PY - 2005 TI - Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy JF - Journal of crystal growth VL - 278 IS - 1-4 SP - 495-499 EP - 495-499 PB - Elsevier Science SN - 00220248 KW - High-resolution X-ray diffraction KW - Multiple quantumwell structures KW - Molecular beamepitaxy KW - Si/SiGe N2 - We present recent achievements on the low-temperature (300 C) molecular beam epitaxial growth of high Ge content Si/SiGe modulation-doped multiple quantum well structures on Si0.5Ge0.5 pseudosubstrates. Highresolution X-ray reflectivity and diffraction experiments performed at the Swiss Light Source synchrotron, as well as analysis by transmission electron microscopy, showed very good control of the growth parameters and interface r.m.s. roughness as low as 0.4 nm. ER -
FALUB, Claudiu, Mojmír MEDUŇA, Elisabeth MÜLLER, Soichiro TSUJINO, Alex BORAK, Hans SIGG, Detlev GRÜTZMACHER, Thomas FROMHERZ a Günther BAUER. Structural studies of strain-symmetrised Si/SiGe structures grown by molecular beam epitaxy. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 2005, roč.~278, 1-4, s.~495-499. ISSN~0022-0248.
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