Detailed Information on Publication Record
2006
1.3 mum emission from InAs/GaAs quantum dots
KULDOVÁ, Karla, Vlastimil KŘÁPEK, Alice HOSPODKOVÁ, Jiří OSWALD, Jiří PANGRÁC et. al.Basic information
Original name
1.3 mum emission from InAs/GaAs quantum dots
Name in Czech
Emise na 1.3 mikrometru z InAs/GaAs kvantových teček
Authors
KULDOVÁ, Karla (203 Czech Republic), Vlastimil KŘÁPEK (203 Czech Republic, guarantor), Alice HOSPODKOVÁ (203 Czech Republic), Jiří OSWALD (203 Czech Republic), Jiří PANGRÁC (203 Czech Republic), Karel MELICHAR (203 Czech Republic), Eduard HULICIUS (203 Czech Republic), Marek POTEMSKI (250 France) and Josef HUMLÍČEK (203 Czech Republic)
Edition
physica status solidi (c), Weinheim, WILEY-VCH Verlag GmbH, 2006, 1610-1642
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
Netherlands
Confidentiality degree
není předmětem státního či obchodního tajemství
RIV identification code
RIV/00216224:14310/06:00018456
Organization unit
Faculty of Science
Keywords in English
quantum dots; InAs/GaAs; magnetophotoluminescence
Tags
International impact, Reviewed
Změněno: 9/4/2010 15:48, prof. RNDr. Josef Humlíček, CSc.
V originále
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
In Czech
We report here the results of our photoluminescence study of a series of single quantum dot layer structures containing InxGa1–xAs strain reducing layers with different In concentration (from 0 % to 29 %), prepared by low pressure metal organic vapour phase epitaxy. These structures display a strong red shift of photoluminescence maxima from 1.25 mum to 1.45 mum at 300 K with increased In content in the ternary layer. The origin of the observed transitions has been explained using magnetophotoluminescence measurements and photoluminescence measurements for different pumping intensities at low temperature. Optical transition energies were calculated using a simple single-band effective mass model with energydependent effective mass. Comparing the calculated and measured energies, we can determine the thickness of the wetting layer and the sizes of the dots.
Links
| GA202/06/0718, research and development project |
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| KJB101630601, research and development project |
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| MSM0021622410, plan (intention) |
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