MEDUŇA, Mojmír, Jiří NOVÁK, Václav HOLÝ, Claudiu FALUB, Günther BAUER and Detlev GRÜTZMACHER. IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES. Materials Structure in Chemistry, Biology, Physics and Technology. Praha, 2006, vol. 13, No 3, p. 161. ISSN 1211-5894.
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Basic information
Original name IN-SITU INVESTIGATIONS OF SI AND GE INTERDIFFUSION IN SI CASCADE STRUCTURES
Name in Czech In-situ studie Si a Ge interdifuse v Si kaskádových strukturách
Authors MEDUŇA, Mojmír (203 Czech Republic, guarantor), Jiří NOVÁK (203 Czech Republic), Václav HOLÝ (203 Czech Republic), Claudiu FALUB (642 Romania), Günther BAUER (40 Austria) and Detlev GRÜTZMACHER (276 Germany).
Edition Materials Structure in Chemistry, Biology, Physics and Technology, Praha, 2006, 1211-5894.
Other information
Original language English
Type of outcome Article in a journal
Field of Study 10302 Condensed matter physics
Country of publisher Czech Republic
Confidentiality degree is not subject to a state or trade secret
RIV identification code RIV/00216224:14310/06:00016353
Organization unit Faculty of Science
Keywords in English x-ray diffraction; interdiffusion; SiGe
Tags Interdiffusion, SiGe, X-ray diffraction
Tags International impact
Changed by Changed by: Mgr. Mojmír Meduňa, Ph.D., učo 7898. Changed: 24/1/2007 15:03.
Abstract
We have studied series of strain symmetrized multiple quantum well structures grown on Si0.25Ge0.25 and Si0.5Ge0.5 pseudosubstrates. The Ge content in these structures was 30% and 80% with multilayer periods in the range from 6 to 13 nm. X-ray reflectivity and diffraction reciprocal space maps for all structures have been recorded at room temperature and during annealing.
Abstract (in Czech)
Studovali jsme sérii deformačně symetrizovaných struktur mnohonásobných kvantových jam vypěstovaných na Si0.25Ge0.25 a Si0.5Ge0.5 pseudosubstrátech. Obsah Ge v těchto strukturách byl 30% a 80% s periodami multivrstev v rozsahu od 6 do 13 nm. Reciproké mapy rtg reflexe a difrakce pro všechny struktury byly zaznamenány za pokojové teploty a během žíhání.
Links
GP202/05/P286, research and development projectName: Studium morfologie polovodičových multivrstev pomocí rtg rozptylu
Investor: Czech Science Foundation, Investigation of morphology of semiconductor multilayers using x-ray scattering
MSM0021622410, plan (intention)Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures
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