Detailed Information on Publication Record
2007
Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
HUMLÍČEK, Josef, Adam DUBROKA, Přemysl MARŠÍK, Dominik MUNZAR, A.V. BORIS et. al.Basic information
Original name
Frequency- and temperature-dependent conductivity at the metal-insulator transition in phosphorus doped silicon studied by far-infrared ellipsometry
Name in Czech
Frekvenčně a teplotně závislá vodivost na přechodu kov-izolátor v bórem legovaném křemíku studovaná elipsometrií v daleké infračervené oblasti
Authors
HUMLÍČEK, Josef (203 Czech Republic, guarantor, belonging to the institution), Adam DUBROKA (203 Czech Republic), Přemysl MARŠÍK (203 Czech Republic, belonging to the institution), Dominik MUNZAR (203 Czech Republic, belonging to the institution), A.V. BORIS (643 Russian Federation) and Christian BERNHARD (276 Germany)
Edition
USA, CP893, Physics of Semiconductors, 28th International Conference, p. 33-34, 2 pp. 2007
Publisher
American Institute of Physics
Other information
Language
English
Type of outcome
Stať ve sborníku
Field of Study
10302 Condensed matter physics
Country of publisher
United States of America
Confidentiality degree
není předmětem státního či obchodního tajemství
RIV identification code
RIV/00216224:14310/07:00025614
Organization unit
Faculty of Science
ISBN
978-0-7354-0397-0
UT WoS
000246281800016
Keywords in English
metal-insulator transition; doped silicon; ellipsometry
Tags
International impact, Reviewed
Změněno: 7/9/2011 12:10, doc. Mgr. Adam Dubroka, Ph.D.
V originále
We report on far-infrared ellipsometric measurements of Si:P with the phosphorus concentration at the metal-insulator (MI) transition, for temperatures from 15 to 300 K in the 50-600 cm-1 spectral range. Temperature coefficients of the complex conductivity have been measured with high resolution; they reveal a nontrivial evolution of the optical response.
In Czech
Referujeme o elipsometrických měřeních v daleké infračervené oblasti na Si:P s koncentrací fosforu na přechodu kov-izolátor, v teplotním oboru od 15 do 300 K. Teplotní koeficienty komplexní vodivosti byly změřeny s vysokým rozlišením; ukazují netriviální vývoj optické odezvy.
Links
| MSM0021622410, plan (intention) |
|