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@inproceedings{746267,
author = {Všianská, Monika and Legut, Dominik and Šob, Mojmír},
address = {Brno},
booktitle = {Sborník příspěvků VII. Pracovního setkání fyzikálních chemiků a elektrochemiků},
keywords = {Electronic structure; tin; indium; gamma-tin; virtual crystal approximation},
language = {eng},
location = {Brno},
isbn = {9788021042353},
pages = {135-137},
publisher = {Masarykova universita},
title = {Electronic structure of indium-tin alloys},
year = {2007}
}
TY - JOUR
ID - 746267
AU - Všianská, Monika - Legut, Dominik - Šob, Mojmír
PY - 2007
TI - Electronic structure of indium-tin alloys
PB - Masarykova universita
CY - Brno
SN - 9788021042353
KW - Electronic structure
KW - tin
KW - indium
KW - gamma-tin
KW - virtual crystal approximation
N2 - The In-Sn system is interesting due to the existence of the simple hexagonal (sh) structure for compositions from 75 to 87 at% Sn at 25 st.C and from 73 to 85 at% Sn at -150 st.C. These alloys are usually referred to as gamma-Sn. The In-Sn alloys are disordered in the whole concentration interval. To describe disorder it is not quite easy. One of the possibilities how to study disordered alloys is the virtual crystal approximation (VCA). VCA investigates a solid as composed of "virtual" atoms which interpolate the behavior of the real atoms from the parent compounds.
ER -
VŠIANSKÁ, Monika, Dominik LEGUT a Mojmír ŠOB. Electronic structure of indium-tin alloys. In \textit{Sborník příspěvků VII. Pracovního setkání fyzikálních chemiků a elektrochemiků}. Brno: Masarykova universita, 2007, s.~135-137. ISBN~9788021042353.
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