Selective dissolution of Agx(As0.33S0.67_ySey)100_x
chalcogenide thin films

J 2008

Selective dissolution of Agx(As0.33S0.67_ySey)100_x chalcogenide thin films

ORAVA, Jiří, Tomáš WAGNER, Miloš KRBAL, Tomáš KOHOUTEK, Milan VLČEK et. al.

Základní údaje

Originální název

Selective dissolution of Agx(As0.33S0.67_ySey)100_x chalcogenide thin films

Název česky

Selektivní leptání Agx(As0.33S0.67_ySey)100_x chalkogenidových tenkých vrstev

Autoři

ORAVA, Jiří (203 Česká republika), Tomáš WAGNER (203 Česká republika), Miloš KRBAL (203 Česká republika), Tomáš KOHOUTEK (203 Česká republika), Milan VLČEK (203 Česká republika), Petr KLAPETEK (203 Česká republika, garant) a Miloslav FRUMAR (203 Česká republika)

Vydání

Journal of Non-Crystalline Solids, Nizozemsko, Elsevier Science B.V. 2008, 0022-3093

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10402 Inorganic and nuclear chemistry

Stát vydavatele

Česká republika

Utajení

není předmětem státního či obchodního tajemství

Impakt faktor

Impact factor: 1.449

Kód RIV

RIV/00216224:14310/08:00028407

Organizační jednotka

Přírodovědecká fakulta

UT WoS

000252860800080

Klíčová slova anglicky

Chemical durability; Composition; Vapor phase deposition; Chalcogenides; Atomic force and scanning tunneling microscopy

Štítky

Chalcogenides, Chemical durability, composition, Vapor phase deposition

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 4. 7. 2009 18:30, Mgr. Miroslav Valtr, Ph.D.

Anotace

V originále

Thin films of AS(33)S(67), AS(33)S(33.5)Se(33.5) and AS(33)Se(67) prepared by vacuum thermal evaporation were selectively etched in alkaline organic solutions of amines i.e. 1,2-diaminopropane, morpholine, aminoethanol, cyclohexylamine, hexylamine, butylamine and propylamine. Dissolution rates v, resolution coefficients y and surface quality are discussed and compared to recently published results of etching process in inorganic solutions of NaOH, Na2S and (NH4)(2)S. The resolution coefficients achieved in amine based solutions are by the order of magnitude higher than ones in inorganic etchants. Etching in organic solutions showed increase of the resolution coefficient and decrease of dissolution rate of exposed and unexposed film in the sequence of propylamine, butylamine, hexylamine and cyclohexylamine solution. The role of different type of amine on dissolution rate and resolution coefficient is discussed. The dissolution parameter y is getting worse in the same type of solvent with increasing content of Se. The dissolution mechanism and relation between photo-structural change and dissolution behavior of films are proposed. New results of negative selective etching of (As0.33Se0.67)(100-x) in NaCN are presented and compared with selective etching curves of recently published Ag-x(As0.33S0.67)(100-x) and Ag-x(AS(0.33)S(0.335)Se(0.335))(100-x) thin films. Potential application is shown in fabrication of 'microlenses like' motive into the Ag-AS(33)S(67) thin film.

Návaznosti

AV0Z40500505, záměr

Název: Progresivní makromolekulární materiály a supramolekulární systémy: syntéza a studium vlastností, jevů a možností využití pro speciální aplikace a moderní technologie

GA203/06/1368, projekt VaV

Název: Příprava a studium amorfních chalkogenidových vrstev a jejich potenciální aplikace pro optický záznam a paměti

MSM0021627501, záměr

Název: Cílená příprava speciálních sloučenin a materiálů a studium jejich fyzikálně-chemických vlastností a nadmolekulárních struktur

Citovat

ORAVA, Jiří, Tomáš WAGNER, Miloš KRBAL, Tomáš KOHOUTEK, Milan VLČEK, Petr KLAPETEK a Miloslav FRUMAR. Selective dissolution of Agx(As0.33S0.67_ySey)100_x chalcogenide thin films. Journal of Non-Crystalline Solids. Nizozemsko: Elsevier Science B.V., 2008, roč. 354, 2-9, s. 533-539. ISSN 0022-3093.

@article{769959,
   author = {Orava, Jiří and Wagner, Tomáš and Krbal, Miloš and Kohoutek, Tomáš and Vlček, Milan and Klapetek, Petr and Frumar, Miloslav},
   article_location = {Nizozemsko},
   article_number = {2-9},
   keywords = {Chemical durability; Composition; Vapor phase deposition; Chalcogenides; Atomic force and scanning tunneling microscopy},
   language = {eng},
   issn = {0022-3093},
   journal = {Journal of Non-Crystalline Solids},
   title = {Selective dissolution of Agx(As0.33S0.67_ySey)100_x chalcogenide thin films},
   volume = {354},
   year = {2008}
}

TY  - JOUR
ID  - 769959
AU  - Orava, Jiří - Wagner, Tomáš - Krbal, Miloš - Kohoutek, Tomáš - Vlček, Milan - Klapetek, Petr - Frumar, Miloslav
PY  - 2008
TI  - Selective dissolution of Agx(As0.33S0.67_ySey)100_x chalcogenide thin films
JF  - Journal of Non-Crystalline Solids
VL  - 354
IS  - 2-9
SP  - 533-539
EP  - 533-539
PB  - Elsevier Science B.V.
SN  - 00223093
KW  - Chemical durability
KW  - Composition
KW  - Vapor phase deposition
KW  - Chalcogenides
KW  - Atomic force and scanning tunneling microscopy
N2  - Thin films of AS(33)S(67), AS(33)S(33.5)Se(33.5) and AS(33)Se(67) prepared by vacuum thermal evaporation were selectively etched in alkaline organic solutions of amines i.e. 1,2-diaminopropane, morpholine, aminoethanol, cyclohexylamine, hexylamine, butylamine and propylamine. Dissolution rates v, resolution coefficients y and surface quality are discussed and compared to recently published results of etching process in inorganic solutions of NaOH, Na2S and (NH4)(2)S. The resolution coefficients achieved in amine based solutions are by the order of magnitude higher than ones in inorganic etchants. Etching in organic solutions showed increase of the resolution coefficient and decrease of dissolution rate of exposed and unexposed film in the sequence of propylamine, butylamine, hexylamine and cyclohexylamine solution. The role of different type of amine on dissolution rate and resolution coefficient is discussed. The dissolution parameter y is getting worse in the same type of solvent with increasing content of Se. The dissolution mechanism and relation between photo-structural change and dissolution behavior of films are proposed. New results of negative selective etching of (As0.33Se0.67)(100-x) in NaCN are presented and compared with selective etching curves of recently published Ag-x(As0.33S0.67)(100-x) and Ag-x(AS(0.33)S(0.335)Se(0.335))(100-x) thin films. Potential application is shown in fabrication of 'microlenses like' motive into the Ag-AS(33)S(67) thin film.
ER  -

ORAVA, Jiří, Tomáš WAGNER, Miloš KRBAL, Tomáš KOHOUTEK, Milan VLČEK, Petr KLAPETEK a Miloslav FRUMAR. Selective dissolution of Agx(As0.33S0.67\_{}ySey)100\_{}x chalcogenide thin films. \textit{Journal of Non-Crystalline Solids}. Nizozemsko: Elsevier Science B.V., 2008, roč.~354, 2-9, s.~533-539. ISSN~0022-3093.

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