2008
Optical Characterization of Ultrananocrystalline Diamond Films
FRANTA, Daniel, Lenka ZAJÍČKOVÁ, Monika KARÁSKOVÁ, Ondřej JAŠEK, David NEČAS et. al.Základní údaje
Originální název
Optical Characterization of Ultrananocrystalline Diamond Films
Název česky
Optická charakterizace ultrananokrystalických diamantových vrstev
Autoři
FRANTA, Daniel (203 Česká republika, garant), Lenka ZAJÍČKOVÁ (203 Česká republika), Monika KARÁSKOVÁ (203 Česká republika), Ondřej JAŠEK (203 Česká republika), David NEČAS (203 Česká republika), Petr KLAPETEK (203 Česká republika) a Miroslav VALTR (203 Česká republika)
Vydání
Diamond and Related Materials, New York, Elsevier, 2008, 0925-9635
Další údaje
Jazyk
angličtina
Typ výsledku
Článek v odborném periodiku
Obor
10302 Condensed matter physics
Stát vydavatele
Spojené státy
Utajení
není předmětem státního či obchodního tajemství
Impakt faktor
Impact factor: 2.092
Kód RIV
RIV/00216224:14310/08:00024370
Organizační jednotka
Přírodovědecká fakulta
UT WoS
000259598300048
Klíčová slova anglicky
Nanocrystalline carbon; Optical properties characterization; Band structure
Příznaky
Mezinárodní význam, Recenzováno
Změněno: 24. 6. 2009 16:12, Mgr. Ondřej Jašek, Ph.D.
V originále
Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.
Česky
Optical properties of the ultrananocrystalline diamond films were studied by multisample method based on the combination of variable angle spectroscopic ellipsometry and spectroscopic reflectometry applied in the range 0.6-6.5 eV. The films were deposited by PECVD in a conventional bell jar (ASTeX type) reactor using dual frequency discharge, microwave cavity plasma and radio frequency plasma inducing dc self-bias at a substrate holder. The optical model of the samples included a surface roughness described by the Rayleigh-Rice theory and a refractive index profile in which Drude approximation was used. The results conformed with the present understanding of the polycrystalline diamond growth on the silicon substrate because the existence of silicon carbide and amorphous hydrogenated carbon film between the silicon substrate and nucleation layer was proved.
Návaznosti
GA202/05/0607, projekt VaV |
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KAN311610701, projekt VaV |
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MSM0021622411, záměr |
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