MARŠÍK, Přemysl, Adam URBANOWICZ, Klara VINOKUR, Yoel COHEN a Mikhail BAKLANOV. Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry. In Materials Research Society Symposium Proceedings. 1079E. Warrendale: Materials Research Society, 2008, 6 s. ISBN 978-1-60511-077-6.
Další formáty:   BibTeX LaTeX RIS
Základní údaje
Originální název Changes of UV Optical Properties of Plasma Damaged Low-k Dielectrics for Sidewall Damage Scatterometry
Název česky Změny UV optických vlastností plazmou poškozených low-k dielektrik pro skaterometrii poškození na stěnách
Autoři MARŠÍK, Přemysl (203 Česká republika, garant), Adam URBANOWICZ (616 Polsko), Klara VINOKUR (376 Izrael), Yoel COHEN (376 Izrael) a Mikhail BAKLANOV (56 Belgie).
Vydání 1079E. Warrendale, Materials Research Society Symposium Proceedings, 6 s. 2008.
Nakladatel Materials Research Society
Další údaje
Originální jazyk angličtina
Typ výsledku Stať ve sborníku
Obor 10302 Condensed matter physics
Stát vydavatele Spojené státy
Utajení není předmětem státního či obchodního tajemství
WWW 1079-N07-04
Kód RIV RIV/00216224:14310/08:00027726
Organizační jednotka Přírodovědecká fakulta
ISBN 978-1-60511-077-6
Klíčová slova anglicky low-k; plasma damage; scatterometry
Štítky low-k, plasma damage, scatterometry
Příznaky Mezinárodní význam, Recenzováno
Změnil Změnil: Mgr. Přemysl Maršík, Ph.D., učo 13477. Změněno: 14. 1. 2010 14:49.
Anotace
Porous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.
Anotace česky
Porous low-k dielectrics were studied to determine the changes of optical properties after various plasma treatments for development of scatterometry technique for evaluation of the trench/via sidewall plasma damage. The SiCOH porogen based low-k films were prepared by PE-CVD. The deposited and UV-cured low-k films have been damaged by striping O2Cl2, O2, NH3 and H2N2 based plasmas and CF4/CH2F2/Ar etching plasma. Blanket wafers were studied in this work for the simplicity of thin film optical model. The optical properties of the damaged low-k dielectrics are evaluated the using various angle spectroscopic ellipsometry in range from 2 to 9 eV. Multilayer optical model is applied to fit the measured quantities and the validity is supported by other techniques. The atomic concentration profiles of Si, C, O and H were stated by TOF-SIMS and changes in overall chemical composition were derived from FTIR. Toluene and water based ellipsometric porosimetry is involved to examine the porosity, pore interconnectivity and internal hydrophilicity.
Návaznosti
MSM0021622410, záměrNázev: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
Investor: Ministerstvo školství, mládeže a tělovýchovy ČR, Fyzikální a chemické vlastnosti pokročilých materiálů a struktur
VytisknoutZobrazeno: 27. 4. 2024 09:22