URBANOWICZ, Adam, Denis SHAMIRYAN, Přemysl MARŠÍK, Youssef TRAVALY, Patrick VERDONCK, Kris VANSTREELS, Abdelkarim FERCHICHI, David DE ROEST, Hessel SPREY, Kiyohiro MATSUSHITA, Shinya KANEKO, N. TSUI, Shijian LUO, Orlando ESCORCIA, Ivan BERRY, Carlo WALDFRIED, Stefan DE GENDT a Mikhail BAKLANOV. Improved low-k dielectric properties using He/H2 plasma for resist removal. In Advanced Metallization Conference - AMC 2008. 2008. |
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@proceedings{866545, author = {Urbanowicz, Adam and Shamiryan, Denis and Maršík, Přemysl and Travaly, Youssef and Verdonck, Patrick and Vanstreels, Kris and Ferchichi, Abdelkarim and De Roest, David and Sprey, Hessel and Matsushita, Kiyohiro and Kaneko, Shinya and Tsui, N. and Luo, Shijian and Escorcia, Orlando and Berry, Ivan and Waldfried, Carlo and De Gendt, Stefan and Baklanov, Mikhail}, booktitle = {Advanced Metallization Conference - AMC 2008}, keywords = {low-k; strip plasma; porogen residues}, language = {eng}, title = {Improved low-k dielectric properties using He/H2 plasma for resist removal}, year = {2008} }
TY - CONF ID - 866545 AU - Urbanowicz, Adam - Shamiryan, Denis - Maršík, Přemysl - Travaly, Youssef - Verdonck, Patrick - Vanstreels, Kris - Ferchichi, Abdelkarim - De Roest, David - Sprey, Hessel - Matsushita, Kiyohiro - Kaneko, Shinya - Tsui, N. - Luo, Shijian - Escorcia, Orlando - Berry, Ivan - Waldfried, Carlo - De Gendt, Stefan - Baklanov, Mikhail PY - 2008 TI - Improved low-k dielectric properties using He/H2 plasma for resist removal KW - low-k KW - strip plasma KW - porogen residues N2 - Aurora ELK low-k films, deposited using a PECVD porogen-based process, were treated with 35 s of He/H2 downstream-plasma (DSP) at varied temperatures of 25 C, 200 C, 300 C and 350 C. The plasma modifications were investigated using various physical-chemical methods. Results showed that extended He/H2 DSP plasma exposure at elevated temperature may lead to k-value reduction due to porosity increase without hydrophilisation of the modified layer. Improvement in dielectric constant is accompanied by a small reduction of mechanical strength. The porosity increase was related to removal of porogen residues formed during the ultra-violet (UV) curing. The porogen residue removal signature was reflected in the optical properties in the UV range and the C-depth profile of the investigated low-k material. ER -
URBANOWICZ, Adam, Denis SHAMIRYAN, Přemysl MARŠÍK, Youssef TRAVALY, Patrick VERDONCK, Kris VANSTREELS, Abdelkarim FERCHICHI, David DE ROEST, Hessel SPREY, Kiyohiro MATSUSHITA, Shinya KANEKO, N. TSUI, Shijian LUO, Orlando ESCORCIA, Ivan BERRY, Carlo WALDFRIED, Stefan DE GENDT a Mikhail BAKLANOV. Improved low-k dielectric properties using He/H2 plasma for resist removal. In \textit{Advanced Metallization Conference - AMC 2008}. 2008.
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