Electronic structure of InAs quantum dots with GaAsSb strain
reducing layer: Localization of holes and its effect on the
optical properties

J 2010

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK; Dominik MUNZAR and Josef HUMLÍČEK

Basic information

Original name

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

Name in Czech

Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

Authors

KLENOVSKÝ, Petr (203 Czech Republic, belonging to the institution); Vlastimil KŘÁPEK (203 Czech Republic); Dominik MUNZAR (203 Czech Republic, belonging to the institution) and Josef HUMLÍČEK (203 Czech Republic, guarantor, belonging to the institution)

Edition

Applied Physics Letters, USA, American institute of physics, 2010, 0003-6951

Other information

Language

English

Type of outcome

Article in a journal

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

is not subject to a state or trade secret

References:

URL

Impact factor

Impact factor: 3.841

RIV identification code

RIV/00216224:14310/10:00045413

Organization unit

Faculty of Science

UT WoS

000284545200055

Keywords in English

band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots

Abstract

In the original language

The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.

Links

GA202/09/0676, research and development project

Name: Vliv krycích vrstev na elektronové stavy v kvantových tečkách

Investor: Czech Science Foundation

MSM0021622410, plan (intention)

Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

MUNI/A/1047/2009, interní kód MU

Name: Struktura, elektronová struktura a optická odezva pokročilých materiálů

Investor: Masaryk University, Category A

Cite

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK; Dominik MUNZAR and Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, vol. 97, No 203107, 3 pp. ISSN 0003-6951.

@article{908032,
   author = {Klenovský, Petr and Křápek, Vlastimil and Munzar, Dominik and Humlíček, Josef},
   article_location = {USA},
   article_number = {203107},
   keywords = {band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots},
   language = {eng},
   issn = {0003-6951},
   journal = {Applied Physics Letters},
   title = {Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties},
   url = {http://link.aip.org/link/?APL/97/203107},
   volume = {97},
   year = {2010}
}

TY  - JOUR
ID  - 908032
AU  - Klenovský, Petr - Křápek, Vlastimil - Munzar, Dominik - Humlíček, Josef
PY  - 2010
TI  - Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
JF  - Applied Physics Letters
VL  - 97
IS  - 203107
PB  - American institute of physics
SN  - 00036951
KW  - band structure
KW  - gallium arsenide
KW  - gallium compounds
KW  - III-V semiconductors
KW  - indium compounds
KW  - k.p calculations
KW  - photoluminescence
KW  - red shift
KW  - semiconductor quantum dots
UR  - http://link.aip.org/link/?APL/97/203107
N2  - The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.
ER  -

KLENOVSKÝ, Petr; Vlastimil KŘÁPEK; Dominik MUNZAR and Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. \textit{Applied Physics Letters}. USA: American institute of physics, 2010, vol.~97, No~203107, 3 pp. ISSN~0003-6951.

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