KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, roč. 97, č. 203107, 3 s. ISSN 0003-6951. |
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@article{908032, author = {Klenovský, Petr and Křápek, Vlastimil and Munzar, Dominik and Humlíček, Josef}, article_location = {USA}, article_number = {203107}, keywords = {band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots}, language = {eng}, issn = {0003-6951}, journal = {Applied Physics Letters}, title = {Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties}, url = {http://link.aip.org/link/?APL/97/203107}, volume = {97}, year = {2010} }
TY - JOUR ID - 908032 AU - Klenovský, Petr - Křápek, Vlastimil - Munzar, Dominik - Humlíček, Josef PY - 2010 TI - Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties JF - Applied Physics Letters VL - 97 IS - 203107 PB - American institute of physics SN - 00036951 KW - band structure KW - gallium arsenide KW - gallium compounds KW - III-V semiconductors KW - indium compounds KW - k.p calculations KW - photoluminescence KW - red shift KW - semiconductor quantum dots UR - http://link.aip.org/link/?APL/97/203107 N2 - The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field. ER -
KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. \textit{Applied Physics Letters}. USA: American institute of physics, 2010, roč.~97, č.~203107, 3 s. ISSN~0003-6951.
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