| KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, roč. 97, č. 203107, 3 s. ISSN 0003-6951. |
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@article{908032,
author = {Klenovský, Petr and Křápek, Vlastimil and Munzar, Dominik and Humlíček, Josef},
article_location = {USA},
article_number = {203107},
keywords = {band structure; gallium arsenide; gallium compounds; III-V semiconductors; indium compounds; k.p calculations; photoluminescence; red shift; semiconductor quantum dots},
language = {eng},
issn = {0003-6951},
journal = {Applied Physics Letters},
title = {Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties},
url = {http://link.aip.org/link/?APL/97/203107},
volume = {97},
year = {2010}
}
TY - JOUR
ID - 908032
AU - Klenovský, Petr - Křápek, Vlastimil - Munzar, Dominik - Humlíček, Josef
PY - 2010
TI - Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties
JF - Applied Physics Letters
VL - 97
IS - 203107
PB - American institute of physics
SN - 00036951
KW - band structure
KW - gallium arsenide
KW - gallium compounds
KW - III-V semiconductors
KW - indium compounds
KW - k.p calculations
KW - photoluminescence
KW - red shift
KW - semiconductor quantum dots
UR - http://link.aip.org/link/?APL/97/203107
N2 - The electronic structure of InAs quantum dots covered with the GaAs1-ySby strain reducing layer has been studied using the k.p theory. We explain previous experimental observations of the red shift of the photoluminescence emission with increasing y and its blue shift with increasing excitation power. For y>0.19, type-II dots are formed with holes localized in the GaAsSb close to the dot base; two segments at the opposite sides of the dot, forming molecular-like states, result from the piezoelectric field. We also propose an experiment that could be used to identify the hole localization using a vertical electric field.
ER -
KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR a Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. \textit{Applied Physics Letters}. USA: American institute of physics, 2010, roč.~97, č.~203107, 3 s. ISSN~0003-6951.
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