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@proceedings{918392,
author = {Meduňa, Mojmír and Caha, Ondřej and Kuběna, Josef and Kuběna, Alan and Svoboda, Milan and Buršík, Jiří},
booktitle = {SILICON 2010},
keywords = {oxygen precipitžation; si wafers},
language = {eng},
isbn = {978-80-254-7361-0},
title = {Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing},
year = {2010}
}
TY - CONF
ID - 918392
AU - Meduňa, Mojmír - Caha, Ondřej - Kuběna, Josef - Kuběna, Alan - Svoboda, Milan - Buršík, Jiří
PY - 2010
TI - Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing
SN - 9788025473610
KW - oxygen precipitžation
KW - si wafers
N2 - In this work we study two stage and three stage annealing processes with application of Tabula rasa. The evolution of precipitates at various phases during annealing process for various temperatures was obtained from series of experimental techniques.
ER -
MEDUŇA, Mojmír, Ondřej CAHA, Josef KUBĚNA, Alan KUBĚNA, Milan SVOBODA a Jiří BURŠÍK. Oxygen Precipitation in CZ Si Wafers after High Temperature Pre-annealing. In \textit{SILICON 2010}. 2010. ISBN~978-80-254-7361-0.
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