Detailed Information on Publication Record
2010
Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
KŘÁPEK, Vlastimil, Petr KLENOVSKÝ, Armando RASTELLI, Oliver G SCHMIDT, Dominik MUNZAR et. al.Basic information
Original name
Quantum entanglement in lateral GaAs/AlGaAs quantum dot molecules
Authors
KŘÁPEK, Vlastimil (203 Czech Republic, belonging to the institution), Petr KLENOVSKÝ (203 Czech Republic, belonging to the institution), Armando RASTELLI (380 Italy), Oliver G SCHMIDT (276 Germany) and Dominik MUNZAR (203 Czech Republic, guarantor, belonging to the institution)
Edition
Journal of Physics: Conference Series, Institute of Physics Publishing, 2010, 1742-6588
Other information
Language
English
Type of outcome
Článek v odborném periodiku
Field of Study
10302 Condensed matter physics
Country of publisher
United Kingdom of Great Britain and Northern Ireland
Confidentiality degree
není předmětem státního či obchodního tajemství
References:
RIV identification code
RIV/00216224:14310/10:00047199
Organization unit
Faculty of Science
UT WoS
000294907400027
Keywords in English
Excitons and related phenomena; Tunneling; Quantum dots; Semiconductor compounds
Tags
International impact, Reviewed
Změněno: 28/4/2011 15:20, prof. Mgr. Dominik Munzar, Dr.
Abstract
V originále
We calculate the excitonic structure of pairs of GaAs/AlGaAs quantum dots forming lateral molecules and obtain the entanglement of exciton states. The following advantages of the lateral geometry over the vertical one are found: (1) The energy structures of the dots forming a molecule can be in principle identical. (2) Comparable tunneling of electrons and holes ensures a high entanglement of antisymmetric excitons. A drawback of existing structures are very low tunneling energies, which make the entanglement vulnerable against differences in the sizes and shapes of both dots.
Links
| GA202/09/0676, research and development project |
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| MSM0021622410, plan (intention) |
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| MUNI/A/1047/2009, interní kód MU |
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