Density of Mn interstitials in (Ga,Mn)As epitaxial layers
determined by anomalous x-ray diffraction

J 2010

Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction

HOLÝ, Václav, Xavier MARTÍ, Lukáš HORÁK, Ondřej CAHA, Vít NOVÁK et. al.

Basic information

Original name

Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction

Name in Czech

Hustota Mn intersticiálů v GaMnAs určená anomální rtg difrakcí

Authors

HOLÝ, Václav (203 Czech Republic), Xavier MARTÍ (724 Spain), Lukáš HORÁK (203 Czech Republic), Ondřej CAHA (203 Czech Republic, guarantor, belonging to the institution), Vít NOVÁK (203 Czech Republic), Miroslav CUKR (203 Czech Republic) and Tobias Urs SCHÜLLI (276 Germany)

Edition

Applied Physics Letters, USA, American Institute of Physics, 2010, 0003-6951

Other information

Language

English

Type of outcome

Článek v odborném periodiku

Field of Study

10302 Condensed matter physics

Country of publisher

United States of America

Confidentiality degree

není předmětem státního či obchodního tajemství

References:

URL

Impact factor

Impact factor: 3.841

RIV identification code

RIV/00216224:14310/10:00049717

Organization unit

Faculty of Science

DOI

http://dx.doi.org/10.1063/1.3514240

UT WoS

000283934100025

Keywords (in Czech)

feromagnetické polovodičů; anomální rtg difrakce

Keywords in English

ferromagnetic semiconductos; anomal x-ray diffraction

Abstract

ORIG CZ

V originále

Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the MnK absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data confirm the previous finding that the density of Mn interstitials in centers of Ga tetrahedrons decrease during post-growth annealing.

In Czech

Hustota intersticiálů Mn v GaMnAs byla určena anomální rtg difrakcí, t.j. měřením závislosti intenzity slabé difrakce 002 na energii fotonu kolem K absorpční hrany Mn.

Links

GP202/09/P410, research and development project

Name: Řízení elastického napětí v magnetických polovodičích

Investor: Czech Science Foundation, Strain engineering in diluted magnetic semiconductors

MSM0021622410, plan (intention)

Name: Fyzikální a chemické vlastnosti pokročilých materiálů a struktur

Investor: Ministry of Education, Youth and Sports of the CR, Physical and chemical properties of advanced materials and structures

Citovat

HOLÝ, Václav, Xavier MARTÍ, Lukáš HORÁK, Ondřej CAHA, Vít NOVÁK, Miroslav CUKR and Tobias Urs SCHÜLLI. Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction. Applied Physics Letters. USA: American Institute of Physics, 2010, vol. 97, No 18, p. 181913-181915. ISSN 0003-6951. Available from: https://dx.doi.org/10.1063/1.3514240.

@article{929699,
   author = {Holý, Václav and Martí, Xavier and Horák, Lukáš and Caha, Ondřej and Novák, Vít and Cukr, Miroslav and Schülli, Tobias Urs},
   article_location = {USA},
   article_number = {18},
   doi = {http://dx.doi.org/10.1063/1.3514240},
   keywords = {ferromagnetic semiconductos; anomal x-ray diffraction},
   language = {eng},
   issn = {0003-6951},
   journal = {Applied Physics Letters},
   title = {Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction},
   url = {https://doi.org/10.1063/1.3514240},
   volume = {97},
   year = {2010}
}

TY  - JOUR
ID  - 929699
AU  - Holý, Václav - Martí, Xavier - Horák, Lukáš - Caha, Ondřej - Novák, Vít - Cukr, Miroslav - Schülli, Tobias Urs
PY  - 2010
TI  - Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction
JF  - Applied Physics Letters
VL  - 97
IS  - 18
SP  - 181913
EP  - 181913
PB  - American Institute of Physics
SN  - 00036951
KW  - ferromagnetic semiconductos
KW  - anomal x-ray diffraction
UR  - https://doi.org/10.1063/1.3514240
L2  - https://doi.org/10.1063/1.3514240
N2  - Densities of Mn ions in epitaxial layers of (Ga,Mn)As were determined by anomalous x-ray diffraction, i.e., by a measurement of the dependence of the intensity of weak diffraction 002 on the photon energy around the MnK absorption edge. From the measured data it was possible to determine the density of Mn ions in substitutional positions and the difference in the Mn densities in two possible interstitial positions in the GaAs lattice. The data confirm the previous finding that the density of Mn interstitials in centers of Ga tetrahedrons decrease during post-growth annealing.
ER  -

HOLÝ, Václav, Xavier MARTÍ, Lukáš HORÁK, Ondřej CAHA, Vít NOVÁK, Miroslav CUKR and Tobias Urs SCHÜLLI. Density of Mn interstitials in (Ga,Mn)As epitaxial layers determined by anomalous x-ray diffraction. \textit{Applied Physics Letters}. USA: American Institute of Physics, 2010, vol.~97, No~18, p.~181913-181915. ISSN~0003-6951. Available from: https://dx.doi.org/10.1063/1.3514240.

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