PLUMHOF, Johannes David, Vlastimil KŘÁPEK, Fei DING, K. D. JOENS, R. HAFENBRAK, Petr KLENOVSKÝ, A. HERKLOTZ, K. DORR, P. MICHLER, Armando RASTELLI and Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. Physical Review B. USA: American Physical Society, 2011, vol. 83, No 12, p. "nestrankovano", 4 pp. ISSN 1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.83.121302. |
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@article{932540, author = {Plumhof, Johannes David and Křápek, Vlastimil and Ding, Fei and Joens, K. D. and Hafenbrak, R. and Klenovský, Petr and Herklotz, A. and Dorr, K. and Michler, P. and Rastelli, Armando and Schmidt, Oliver G.}, article_location = {USA}, article_number = {12}, doi = {http://dx.doi.org/10.1103/PhysRevB.83.121302}, keywords = {ENTANGLED PHOTON PAIRS; SEMICONDUCTOR; SPIN}, language = {eng}, issn = {1098-0121}, journal = {Physical Review B}, title = {Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots}, url = {http://prb.aps.org/abstract/PRB/v83/i12/e121302}, volume = {83}, year = {2011} }
TY - JOUR ID - 932540 AU - Plumhof, Johannes David - Křápek, Vlastimil - Ding, Fei - Joens, K. D. - Hafenbrak, R. - Klenovský, Petr - Herklotz, A. - Dorr, K. - Michler, P. - Rastelli, Armando - Schmidt, Oliver G. PY - 2011 TI - Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots JF - Physical Review B VL - 83 IS - 12 SP - "nestrankovano" EP - "nestrankovano" PB - American Physical Society SN - 10980121 KW - ENTANGLED PHOTON PAIRS KW - SEMICONDUCTOR KW - SPIN UR - http://prb.aps.org/abstract/PRB/v83/i12/e121302 L2 - http://prb.aps.org/abstract/PRB/v83/i12/e121302 N2 - We study the effect of elastic anisotropic biaxial strain, induced by a piezoelectric actuator, on the light emitted by neutral excitons confined in different kinds of epitaxial quantum dots. We find that the light polarization rotates by up to similar to 80 degrees and the fine structure splitting (FSS) varies nonmonotonically by several tens of mu eV as the strain is varied. These findings provide the experimental proof of a recently predicted strain-induced anticrossing of the bright states of neutral excitons in quantum dots. Calculations on model dots qualitatively reproduce the observations and suggest that the minimum reachable FSS critically depends on the orientation of the strain axis relative to the dot elongation. ER -
PLUMHOF, Johannes David, Vlastimil KŘÁPEK, Fei DING, K. D. JOENS, R. HAFENBRAK, Petr KLENOVSKÝ, A. HERKLOTZ, K. DORR, P. MICHLER, Armando RASTELLI and Oliver G. SCHMIDT. Strain-induced anticrossing of bright exciton levels in single self-assembled GaAs/AlxGa1-xAs and InxGa1-xAs/GaAs quantum dots. \textit{Physical Review B}. USA: American Physical Society, 2011, vol.~83, No~12, p.~''nestrankovano'', 4 pp. ISSN~1098-0121. Available from: https://dx.doi.org/10.1103/PhysRevB.83.121302.
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