Publication Records

2010

1. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties

   KLENOVSKÝ, Petr, Vlastimil KŘÁPEK, Dominik MUNZAR and Josef HUMLÍČEK. Electronic structure of InAs quantum dots with GaAsSb strain reducing layer: Localization of holes and its effect on the optical properties. Applied Physics Letters. USA: American institute of physics, 2010, vol. 97, No 203107, 3 pp. ISSN 0003-6951.

   More: https://is.muni.cz/publication/908032/en