| MEDUŇA, Mojmír, Jiří RŮŽIČKA, Ondřej CAHA, Jiří BURŠÍK a Milan SVOBODA. Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods. Online. Physica B condensed matter. Amsterdam: Elsevier Science, 2012, roč. 407, č. 15, s. 3002-3005. ISSN 0921-4526. Dostupné z: https://dx.doi.org/10.1016/j.physb.2011.08.063. [citováno 2024-04-24] |
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@article{1081853,
author = {Meduňa, Mojmír and Růžička, Jiří and Caha, Ondřej and Buršík, Jiří and Svoboda, Milan},
article_location = {Amsterdam},
article_number = {15},
doi = {http://dx.doi.org/10.1016/j.physb.2011.08.063},
keywords = {silicon; interstitial oxygen; precipitation},
language = {eng},
issn = {0921-4526},
journal = {Physica B condensed matter},
title = {Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods},
url = {http://ac.els-cdn.com/S0921452611008167/1-s2.0-S0921452611008167-main.pdf?_tid=a8f910ba-bef8-11e3-ae40-00000aacb35e&acdnat=1396946274_3147665ce89a86731eb6f8a7881fb548},
volume = {407},
year = {2012}
}
TY - JOUR
ID - 1081853
AU - Meduňa, Mojmír - Růžička, Jiří - Caha, Ondřej - Buršík, Jiří - Svoboda, Milan
PY - 2012
TI - Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods
JF - Physica B condensed matter
VL - 407
IS - 15
SP - 3002-3005
EP - 3002-3005
PB - Elsevier Science
SN - 09214526
KW - silicon
KW - interstitial oxygen
KW - precipitation
UR - http://ac.els-cdn.com/S0921452611008167/1-s2.0-S0921452611008167-main.pdf?_tid=a8f910ba-bef8-11e3-ae40-00000aacb35e&acdnat=1396946274_3147665ce89a86731eb6f8a7881fb548
L2 - http://ac.els-cdn.com/S0921452611008167/1-s2.0-S0921452611008167-main.pdf?_tid=a8f910ba-bef8-11e3-ae40-00000aacb35e&acdnat=1396946274_3147665ce89a86731eb6f8a7881fb548
N2 - We have investigated oxygen precipitation in Czochralski silicon wafers focusing on influence of nucleation temperature and high temperature pre-anneal during common three step treatment. Thick Si wafers were studied mainly by x-ray diffraction in Laue transmission geometry using Mo x-ray tube, but were also compared to reciprocal space maps obtained in Bragg reflection geometry. The analysis of measured diffraction scans in Laue geometry was performed by means of Takagi equations and statistical dynamical theory of diffraction. From the simulated Laue diffraction cuvers we find the size of the individual defect area and the fraction of strain area volume in the wafer. The results obtained from x-ray diffraction were compared to loss of interstitial oxygen according to infrared absorption spectroscopy and the size of SiO2 precipitate core was estimated. These techniques are in agreement with transmission electron microscopy images.
ER -
MEDUŇA, Mojmír, Jiří RŮŽIČKA, Ondřej CAHA, Jiří BURŠÍK a Milan SVOBODA. Precipitation in silicon wafers after high temperature preanneal studied by X-ray diffraction methods. Online. \textit{Physica B condensed matter}. Amsterdam: Elsevier Science, 2012, roč.~407, č.~15, s.~3002-3005. ISSN~0921-4526. Dostupné z: https://dx.doi.org/10.1016/j.physb.2011.08.063. [citováno 2024-04-24]
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