| MEDUŇA, Mojmír, Ondřej CAHA a Jiří BURŠÍK. Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers. Journal of crystal growth. Amsterdam: Elsevier Science, 2012, roč. 348, č. 1, s. 53-59. ISSN 0022-0248. Dostupné z: https://dx.doi.org/10.1016/j.jcrysgro.2012.03.048. |
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@article{1081865,
author = {Meduňa, Mojmír and Caha, Ondřej and Buršík, Jiří},
article_location = {Amsterdam},
article_number = {1},
doi = {http://dx.doi.org/10.1016/j.jcrysgro.2012.03.048},
keywords = {impurities; point defects; precipitates},
language = {eng},
issn = {0022-0248},
journal = {Journal of crystal growth},
title = {Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers},
volume = {348},
year = {2012}
}
TY - JOUR
ID - 1081865
AU - Meduňa, Mojmír - Caha, Ondřej - Buršík, Jiří
PY - 2012
TI - Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers
JF - Journal of crystal growth
VL - 348
IS - 1
SP - 53-59
EP - 53-59
PB - Elsevier Science
SN - 00220248
KW - impurities
KW - point defects
KW - precipitates
N2 - We have investigated Czochralski grown low boron doped silicon wafers after oxygen precipitation using high temperature preannealing. Wafers originating from the part of the silicon ingot close to head and close to tail were used for the experiments representing different temperature history of the wafers. The loss of interstitial oxygen, precipitate morphology and stoichiometry at various stages of precipitation were determined by infrared absorption spectroscopy at liquid nitrogen and at room temperature. The impact of a high temperature preannealing at various temperatures on the parameters of precipitates including also their concentration determined from chemical etching was observed during the growth of oxygen precipitates. The obtained results were compared with transmission electron microscopy.
ER -
MEDUŇA, Mojmír, Ondřej CAHA a Jiří BURŠÍK. Studies of influence of high temperature preannealing on oxygen precipitation in CZ Si wafers. \textit{Journal of crystal growth}. Amsterdam: Elsevier Science, 2012, roč.~348, č.~1, s.~53-59. ISSN~0022-0248. Dostupné z: https://dx.doi.org/10.1016/j.jcrysgro.2012.03.048.
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