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@inproceedings{1094593,
author = {Skácelová, Dana and Haničinec, Martin and Sťahel, Pavel and Černák, Mirko},
address = {Ostrava},
booktitle = {NANOCON 2012, 4th INTERNATIONAL CONFERENCE},
keywords = {Coplanar DBD; silicon dioxide; oxidation; atmospheric pressure plasma},
howpublished = {elektronická verze "online"},
language = {eng},
location = {Ostrava},
isbn = {978-80-87294-32-1},
pages = {778-781},
publisher = {TANGER Ltd.},
title = {Oxidation of Silicon Surface by DCSBD},
url = {http://www.nanocon.eu/files/proceedings/04/reports/772.pdf},
year = {2012}
}
TY - JOUR
ID - 1094593
AU - Skácelová, Dana - Haničinec, Martin - Sťahel, Pavel - Černák, Mirko
PY - 2012
TI - Oxidation of Silicon Surface by DCSBD
PB - TANGER Ltd.
CY - Ostrava
SN - 9788087294321
KW - Coplanar DBD
KW - silicon dioxide
KW - oxidation
KW - atmospheric pressure plasma
UR - http://www.nanocon.eu/files/proceedings/04/reports/772.pdf
N2 - In the present work plasma oxidation of crystalline silicon (c-Si) surface in diffuse coplanar surface barrier discharge (DCSBD) generated at atmospheric pressure has been studied. Silicon surface has been oxidized in oxygen and argon plasma. The surface properties have been studied by means scanning electron microscopy (SEM) and energy dispersive X-ray (EDX) analyses. It was found that thin layer of amorphous silicon dioxide during the short treatment time was formed. Oxidation by DCSBD could represent new alternative of a low cost and fast oxidation process.
ER -
SKÁCELOVÁ, Dana, Martin HANIČINEC, Pavel SŤAHEL a Mirko ČERNÁK. Oxidation of Silicon Surface by DCSBD. In \textit{NANOCON 2012, 4th INTERNATIONAL CONFERENCE}. Ostrava: TANGER Ltd. s.~778-781. ISBN~978-80-87294-32-1. 2012.
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