Room temperature plasma oxidation in DCSBD: A new method for
preparation of silicon dioxide films at atmospheric pressure

J 2013

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

SKÁCELOVÁ, Dana; Vladimir DANILOV; Jan SCHÄFER; Antje QUADE; Pavel SŤAHEL et al.

Základní údaje

Originální název

Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure

Autoři

SKÁCELOVÁ, Dana; Vladimir DANILOV; Jan SCHÄFER; Antje QUADE; Pavel SŤAHEL; Mirko ČERNÁK a Jürgen MEICHSNER

Vydání

Materials Science & Engineering B, Elsevier B.V. 2013, 0921-5107

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10305 Fluids and plasma physics

Stát vydavatele

Nizozemské království

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 2.122

Označené pro přenos do RIV

Ano

Kód RIV

RIV/00216224:14310/13:00068098

Organizační jednotka

Přírodovědecká fakulta

DOI

https://doi.org/10.1016/j.mseb.2012.10.017

UT WoS

000318581800018

Klíčová slova anglicky

Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD

Štítky

AKR, rivok

Příznaky

Mezinárodní význam

Změněno: 9. 4. 2014 12:44, Ing. Andrea Mikešková

Anotace

V originále

In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.

Návaznosti

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Citovat

SKÁCELOVÁ, Dana; Vladimir DANILOV; Jan SCHÄFER; Antje QUADE; Pavel SŤAHEL; Mirko ČERNÁK a Jürgen MEICHSNER. Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure. Materials Science & Engineering B. Elsevier B.V., 2013, roč. 178, č. 9, s. 651–655. ISSN 0921-5107. Dostupné z: https://doi.org/10.1016/j.mseb.2012.10.017.

@article{1102820,
   author = {Skácelová, Dana and Danilov, Vladimir and Schäfer, Jan and Quade, Antje and Sťahel, Pavel and Černák, Mirko and Meichsner, Jürgen},
   article_number = {9},
   doi = {https://doi.org/10.1016/j.mseb.2012.10.017},
   keywords = {Atmospheric pressure plasma; Plasma oxidation; Silicon dioxide; Coplanar DBD},
   language = {eng},
   issn = {0921-5107},
   journal = {Materials Science & Engineering B},
   title = {Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure},
   url = {http://www.sciencedirect.com/science/article/pii/S0921510712004989},
   volume = {178},
   year = {2013}
}

TY  - JOUR
ID  - 1102820
AU  - Skácelová, Dana - Danilov, Vladimir - Schäfer, Jan - Quade, Antje - Sťahel, Pavel - Černák, Mirko - Meichsner, Jürgen
PY  - 2013
TI  - Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure
JF  - Materials Science & Engineering B
VL  - 178
IS  - 9
SP  - 651–655
EP  - 651–655
PB  - Elsevier B.V.
SN  - 09215107
KW  - Atmospheric pressure plasma
KW  - Plasma oxidation
KW  - Silicon dioxide
KW  - Coplanar DBD
UR  - http://www.sciencedirect.com/science/article/pii/S0921510712004989
N2  - In this paper a new process for the preparation of thin silicon dioxide (SiO2) film is presented: the oxidation of c-Si (1 1 1) surface in atmospheric pressure plasma at room temperature. Diffuse coplanar surface barrier discharge (DCSBD) at atmospheric pressure in air and oxygen atmosphere has been used. The oxidation rate and the thickness of oxidized layers were estimated by ellipsometry. The structure and the chemical composition of oxidized layers were investigated by infrared reflection absorption spectroscopy (IRRAS), X-ray photoelectron spectroscopy (XPS) and energy dispersive X-ray (EDX) analysis. Scanning electron microscopy (SEM) was used to observe the morphology of the layer surface. It was found that stoichiometric SiO2 layers were obtained with oxidation rates comparable to thermal oxidation.
ER  -

SKÁCELOVÁ, Dana; Vladimir DANILOV; Jan SCHÄFER; Antje QUADE; Pavel SŤAHEL; Mirko ČERNÁK a Jürgen MEICHSNER. Room temperature plasma oxidation in DCSBD: A new method for preparation of silicon dioxide films at atmospheric pressure. \textit{Materials Science \&{} Engineering B}. Elsevier B.V., 2013, roč.~178, č.~9, s.~651–655. ISSN~0921-5107. Dostupné z: https://doi.org/10.1016/j.mseb.2012.10.017.

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