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@proceedings{1124646,
author = {Švihlová, Katarína and Prokeš, Lubomír and Alberti, Milan and Němec, Petr and Havel, Josef},
keywords = {chalcogenide glasses; Ge-As-Se; LDI ToF MS},
language = {eng},
title = {Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry},
year = {2013}
}
TY - CONF
ID - 1124646
AU - Švihlová, Katarína - Prokeš, Lubomír - Alberti, Milan - Němec, Petr - Havel, Josef
PY - 2013
TI - Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry
KW - chalcogenide glasses
KW - Ge-As-Se
KW - LDI ToF MS
N2 - Chalcogenide glasses are advanced materials with many applications in the field of infrared optics and electronics. The Ge-As-Se system belongs to group of glasses which are distinguished from other materials by large glass-forming region as well as tuning their photosensitivity/photostability. The glasses and amorphous thin films from Ge-As-Se system were already studied via several methods, however the plasma chemistry which is of high importance for thin films growth via plasma techniques is not understood yet. Therefore, in this work Ge-As-Se glasses were manufactured and their interaction with high energy laser pulses was studied using laser desorption ionisation time-of-flight mass spectrometry. It was shown in previous papers that clusters ablated from the solid glass posses to a certain extend part of the original structure and thus information about the structural patterns of solid glass can be obtained. The spectra are quite complex and often result of several clusters overlap. Because germanium always contains some hydrogen, GemAsnSeo clusters observed are overlayed with hydrogenated GemAsnSeoHx species. The stoichiometry was proposed analysing isotopic envelopes and via computer modeling with respect to composition of original chalcogenide glasses. Chalcogenide glasses are advanced materials with many applications in the field of infrared optics and electronics. The Ge-As-Se system belongs to group of glasses which are distinguished from other materials by large glass-forming region as well as tuning their photosensitivity/photostability. The glasses and amorphous thin films from Ge-As-Se system were already studied via several methods [1, 2], however the plasma chemistry which is of high importance for thin films growth via plasma techniques is not understood yet. Therefore, in this work Ge-As-Se glasses were manufactured and their interaction with high energy laser pulses was studied using laser desorption ionisation time-of-flight mass spectrometry. It was shown in previous papers [3, 4] that clusters ablated from the solid glass posses to a certain extend part of the original structure and thus information about the structural patterns of solid glass can be obtained. The spectra are quite complex and often result of several clusters overlap. Because germanium always contains some hydrogen, GemAsnSeo clusters observed are overlayed with hydrogenated GemAsnSeoHx species. The stoichiometry was proposed analysing isotopic envelopes and via computer modeling with respect to composition of original chalcogenide glasses.
ER -
ŠVIHLOVÁ, Katarína, Lubomír PROKEŠ, Milan ALBERTI, Petr NĚMEC a Josef HAVEL. \textit{Study of Ge-As-Se chalcogenide glasses using laser desorption ionisation time-of-flight mass spectrometry}. 2013. ISSN~1336-7242.
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