Application of sum rule to the dispersion model of hydrogenated
amorphous silicon

J 2013

Application of sum rule to the dispersion model of hydrogenated amorphous silicon

FRANTA, Daniel; David NEČAS; Lenka ZAJÍČKOVÁ; Ivan OHLÍDAL; Jiří STUCHLÍK et. al.

Základní údaje

Originální název

Application of sum rule to the dispersion model of hydrogenated amorphous silicon

Autoři

FRANTA, Daniel; David NEČAS; Lenka ZAJÍČKOVÁ; Ivan OHLÍDAL; Jiří STUCHLÍK a Dagmar CHVOSTOVA

Vydání

Thin Solid Films, Lausanne, Elsevier Science, 2013, 0040-6090

Další údaje

Jazyk

angličtina

Typ výsledku

Článek v odborném periodiku

Obor

10302 Condensed matter physics

Stát vydavatele

Švýcarsko

Utajení

není předmětem státního či obchodního tajemství

Odkazy

URL

Impakt faktor

Impact factor: 1.867

Kód RIV

RIV/00216224:14740/13:00071631

Organizační jednotka

Středoevropský technologický institut

DOI

https://doi.org/10.1016/j.tsf.2013.04.012

UT WoS

000321111100039

Klíčová slova anglicky

Optical constants; Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule

Štítky

podil, rivok

Příznaky

Mezinárodní význam, Recenzováno

Změněno: 14. 7. 2015 10:04, Olga Křížová

Anotace

V originále

Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states. It is demonstrated that a combination of optical measurements over the wide range, combined with reasonable assumptions about the optical response in regions where no experimental data are available can lead to dispersion models enabling to determine the mass density of the film. Comparing the density of states determined by tight-binding method with that obtained from optical data, it is shown that an excitonic effect is significant in a-Si:H and causes a redistribution of transition probability from higher energies to the broad peak centered at 3.5 eV. Moreover, it is suggested how to apply the sum rule in the commercial ellipsometric software implementing the Tauc–Lorentz model.

Návaznosti

ED1.1.00/02.0068, projekt VaV

Název: CEITEC - central european institute of technology

ED2.1.00/03.0086, projekt VaV

Název: Regionální VaV centrum pro nízkonákladové plazmové a nanotechnologické povrchové úpravy

Přiložené soubory

ZVV_2013_1161978_Application_of_sum.pdf

Požádat o autorskou verzi souboru

TSF539_233.pdf

Požádat o autorskou verzi souboru

Citovat

FRANTA, Daniel; David NEČAS; Lenka ZAJÍČKOVÁ; Ivan OHLÍDAL; Jiří STUCHLÍK a Dagmar CHVOSTOVA. Application of sum rule to the dispersion model of hydrogenated amorphous silicon. Thin Solid Films. Lausanne: Elsevier Science, 2013, roč. 539, Jul, s. 233-244. ISSN 0040-6090. Dostupné z: https://doi.org/10.1016/j.tsf.2013.04.012.

@article{1161978,
   author = {Franta, Daniel and Nečas, David and Zajíčková, Lenka and Ohlídal, Ivan and Stuchlík, Jiří and Chvostova, Dagmar},
   article_location = {Lausanne},
   article_number = {Jul},
   doi = {https://doi.org/10.1016/j.tsf.2013.04.012},
   keywords = {Optical constants; Ellipsometry; Spectrophotometry; a-Si:H; Urbach tail; Localized states; Sum rule},
   language = {eng},
   issn = {0040-6090},
   journal = {Thin Solid Films},
   title = {Application of sum rule to the dispersion model of hydrogenated amorphous silicon},
   url = {http://dx.doi.org/10.1016/j.tsf.2013.04.012},
   volume = {539},
   year = {2013}
}

TY  - JOUR
ID  - 1161978
AU  - Franta, Daniel - Nečas, David - Zajíčková, Lenka - Ohlídal, Ivan - Stuchlík, Jiří - Chvostova, Dagmar
PY  - 2013
TI  - Application of sum rule to the dispersion model of hydrogenated amorphous silicon
JF  - Thin Solid Films
VL  - 539
IS  - Jul
SP  - 233-244
EP  - 233-244
PB  - Elsevier Science
SN  - 00406090
KW  - Optical constants
KW  - Ellipsometry
KW  - Spectrophotometry
KW  - a-Si:H
KW  - Urbach tail
KW  - Localized states
KW  - Sum rule
UR  - http://dx.doi.org/10.1016/j.tsf.2013.04.012
L2  - http://dx.doi.org/10.1016/j.tsf.2013.04.012
N2  - Optical data obtained for a-Si:H films by ellipsometry and spectrophotometry in the wide photon energy range 0.046–8.9 eV are fitted using the analytical dispersion models based on the application of the sum rule. The models include all absorption processes ranging from phonon absorption in IR region to core electron excitations in X-ray region. They take into account the existence of extended and localized states of valence electrons and distinguish transitions to conduction band and higher energy electron states. It is demonstrated that a combination of optical measurements over the wide range, combined with reasonable assumptions about the optical response in regions where no experimental data are available can lead to dispersion models enabling to determine the mass density of the film. Comparing the density of states determined by tight-binding method with that obtained from optical data, it is shown that an excitonic effect is significant in a-Si:H and causes a redistribution of transition probability from higher energies to the broad peak centered at 3.5 eV. Moreover, it is suggested how to apply the sum rule in the commercial ellipsometric software implementing the Tauc–Lorentz model.
ER  -

FRANTA, Daniel; David NEČAS; Lenka ZAJÍČKOVÁ; Ivan OHLÍDAL; Jiří STUCHLÍK a Dagmar CHVOSTOVA. Application of sum rule to the dispersion model of hydrogenated amorphous silicon. \textit{Thin Solid Films}. Lausanne: Elsevier Science, 2013, roč.~539, Jul, s.~233-244. ISSN~0040-6090. Dostupné z: https://doi.org/10.1016/j.tsf.2013.04.012.

Přehled o publikaci